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GT30J124 Spec and Replacement

The GT30J124 is an N-channel IGBT (insulated-gate bipolar transistor) in a TO-220F (TO-220SIS) package. Its maximum collector-emitter voltage (Vce) is 600V, making it suitable for medium/high-voltage applications. It supports a high peak collector current — up to 200A in pulse mode — while continuous collector current rating is often specified around 30A. The maximum power dissipation at 25°C is about 26W. The typical saturation voltage (Vce(on)) at nominal current is 2.4V, helping reduce conduction losses. Because of its combination of high voltage, high current capability, reasonable switching characteristics, GT30J124 is often used in power-conversion circuits, motor drivers, inverters, similar power electronics applications.


   Type Designator: GT30J124
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 26 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Ic| ⓘ - Maximum Collector Current: 200(pulse) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
   Package: TO220SIS

 GT30J124 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GT30J124 specs

 7.1. Size:321K  toshiba
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GT30J124

GT30J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J122 4TH GENERATION IGBT Unit mm CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS Enhancement mode type High speed tf = 0.25 s (Typ.) (IC = 50A) Low saturation voltage VCE (sat) = 2.1V (Typ.) (IC = 50A) ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Characteristic Symbol Rating Unit Coll... See More ⇒

 7.2. Size:182K  toshiba
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GT30J124

GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Unit mm Fast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS) Operating frequency up to 50 kHz (reference) High speed tf = 0.05 s (typ.) Low switching loss Eon = 1.00 mJ (typ.) Eoff = 0.80 mJ (typ... See More ⇒

 7.3. Size:192K  toshiba
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GT30J124

GT30J122A Discrete IGBTs Silicon N-Channel IGBT GT30J122A GT30J122A GT30J122A GT30J122A 1. Applications 1. Applications 1. Applications 1. Applications Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor Correction (PFC) Applications Note The product(s) described herein should not be used for any other application. 2. F... See More ⇒

 7.4. Size:187K  toshiba
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GT30J124

GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Unit mm Fast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS) High speed tf = 0.05 s (typ.) Low switching loss Eon = 1.00 mJ (typ.) Eoff = 0.80 mJ (typ.) Low saturation voltage VCE (sat) = ... See More ⇒

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Specs: GT30F125 , GT45F127 , GT45F128 , GT30F131 , GT30G124 , GT30G125 , GT45G127 , GT45G128 , TGPF30N43P , GT5G133 , GT5J301 , GT8G151 , GT10G131 , GT10J303 , GT10J321 , GT15J301 , GT15J321 .

History: IXGH32N60AU1

Keywords - GT30J124 transistor spec

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