GT8G151 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GT8G151
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 0.83
Tensión máxima colector-emisor |Vce|, V: 400
Tensión máxima puerta-emisor |Vge|, V: 4
Colector de Corriente Continua a 25℃ |Ic|, A: 150(pulse)
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.65
Temperatura máxima de unión (Tj), ℃: 150
Paquete / Cubierta: TSON8
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GT8G151 Datasheet (PDF)
gt8g151.pdf
GT8G151 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 Strobe Flash Applications Unit: mmUnit: mm Enhancement-mode TSON-8TSON-8 Low gate drive voltage: VGE = 2.5 V (min.) (@IC = 150 A) Peak collector current: IC = 150 A (max) 0.650.050.650.058 7 6 58 7 6 5 Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta =
gt8g121.pdf
GT8G121 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G121 Unit: mmSTROBE FLASH APPLICATIONS 4th Generation (Trench Gate Structure) Enhancement-Mode Low Saturation Voltage : V = 7 V (Max.) (@I = 150 A) CE (sat) C 4 V Gate Drive MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Emitter Voltage VCES 400 VDC VGES 6 VG
gt8g103.pdf
GT8G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G103 STROBE FLASH APPLICATIONS Unit: mm 3rd Generation (A) Enhancement-Mode Low Saturation Voltage: VCE (sat) = 8 V (Max.) (@IC = 150 A) 4.5 V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Emitter Voltage VCES 400 V(B) DC VGES 6 VGate-
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