GT8G151 - аналоги и описание IGBT

GT8G151 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 Strobe Flash Applications Unit mm Unit mm Enhancement-mode TSON-8 TSON-8 Low gate drive voltage VGE = 2.5 V (min.) (@IC = 150 A) Peak collector current IC = 150 A (max) 0.65 0.05 0.65 0.05 8 7 6 5 8 7 6 5 Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta =

GT8G121 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G121 Unit mm STROBE FLASH APPLICATIONS 4th Generation (Trench Gate Structure) Enhancement-Mode Low Saturation Voltage V = 7 V (Max.) (@I = 150 A) CE (sat) C 4 V Gate Drive MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 400 V DC VGES 6 V G

GT8G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G103 STROBE FLASH APPLICATIONS Unit mm 3rd Generation (A) Enhancement-Mode Low Saturation Voltage VCE (sat) = 8 V (Max.) (@IC = 150 A) 4.5 V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 400 V (B) DC VGES 6 V Gate-