GT8G151 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

GT8G151 Specs and Replacement

Type Designator: GT8G151

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 0.83 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 4 V

|Ic| ⓘ - Maximum Collector Current: 150(pulse) A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.65 V @25℃

Package: TSON8

GT8G151 Substitution

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GT8G151 datasheet

..1. Size:246K toshiba
gt8g151.pdf pdf_icon

GT8G151 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 Strobe Flash Applications Unit mm Unit mm Enhancement-mode TSON-8 TSON-8 Low gate drive voltage VGE = 2.5 V (min.) (@IC = 150 A) Peak collector current IC = 150 A (max) 0.65 0.05 0.65 0.05 8 7 6 5 8 7 6 5 Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta =... See More ⇒

9.1. Size:249K toshiba
gt8g121.pdf pdf_icon

GT8G121 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G121 Unit mm STROBE FLASH APPLICATIONS 4th Generation (Trench Gate Structure) Enhancement-Mode Low Saturation Voltage V = 7 V (Max.) (@I = 150 A) CE (sat) C 4 V Gate Drive MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 400 V DC VGES 6 V G... See More ⇒

9.2. Size:364K toshiba
gt8g103.pdf pdf_icon

GT8G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT8G103 STROBE FLASH APPLICATIONS Unit mm 3rd Generation (A) Enhancement-Mode Low Saturation Voltage VCE (sat) = 8 V (Max.) (@IC = 150 A) 4.5 V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 400 V (B) DC VGES 6 V Gate-... See More ⇒

9.3. Size:29K toshiba
gt8g101.pdf pdf_icon