All IGBT. GT8G151 Datasheet

 

GT8G151 IGBT. Datasheet pdf. Equivalent

Type Designator: GT8G151

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 0.83

Maximum Collector-Emitter Voltage |Vce|, V: 400

Collector-Emitter saturation Voltage |Vcesat|, V: 2.65

Maximum Gate-Emitter Voltage |Veg|, V: 4

Maximum Collector Current |Ic|, A: 150(pulse)

Maximum Junction Temperature (Tj), °C: 150

Package: TSON8

GT8G151 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GT8G151 Datasheet (PDF)

1.1. gt8g151 100812.pdf Size:246K _toshiba

GT8G151
GT8G151

GT8G151 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 Strobe Flash Applications Unit: mm Unit: mm Enhancement-mode TSON-8 TSON-8 Low gate drive voltage: VGE = 2.5 V (min.) (@IC = 150 A) Peak collector current: IC = 150 A (max) 0.650.05 0.650.05 8 7 6 5 8 7 6 5 Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta = 25C) Char

Datasheet: GT30F131 , GT30G124 , GT30G125 , GT45G127 , GT45G128 , GT30J124 , GT5G133 , GT5J301 , 20N60C3R , GT10G131 , GT10J303 , GT10J321 , GT15J301 , GT15J321 , GT20J321 , GT30J121 , GT30J122 .

 


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