GT10G131 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GT10G131
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1.9 W
|Vce|ⓘ - Tensión máxima colector-emisor: 400 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 6 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200(pulse) A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.3 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
Paquete / Cubierta: 2-6J1C
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GT10G131 Datasheet (PDF)
gt10g131.pdf
GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm Supplied in compact and thin package requires only a small mounting area 5th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) Peak collector current: IC = 200 A (max) Built
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History: FGH40N60SMDF | TGH30N120FD | NGTB60N60S | GPU150HF120D2 | IRG4PH30K | HGTG30N60C3D | IXBH9N160
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