GT10G131 PDF and Equivalents Search

 

GT10G131 Specs and Replacement


   Type Designator: GT10G131
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 1.9 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
   |Ic| ⓘ - Maximum Collector Current: 200(pulse) A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   Package: 2-6J1C
 

 GT10G131 Substitution

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GT10G131 datasheet

 ..1. Size:201K  toshiba
 gt10g131.pdf pdf_icon

GT10G131

GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit mm Supplied in compact and thin package requires only a small mounting area 5th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage VGE = 4.0 V (min) (@IC = 200 A) Peak collector current IC = 200 A (max) Built... See More ⇒

 8.1. Size:128K  toshiba
 gt10g101.pdf pdf_icon

GT10G131

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Specs: GT30G124 , GT30G125 , GT45G127 , GT45G128 , GT30J124 , GT5G133 , GT5J301 , GT8G151 , GT30G122 , GT10J303 , GT10J321 , GT15J301 , GT15J321 , GT20J321 , GT30J121 , GT30J122 , GT30J126 .

Keywords - GT10G131 transistor spec

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