GT10G131 Datasheet and Replacement
Type Designator: GT10G131
Type: IGBT + Built-in Zener Diodes
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 1.9 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
|Ic| ⓘ - Maximum Collector Current: 200(pulse) A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Qg ⓘ - Total Gate Charge, typ: 600 nC
Package: 2-6J1C
GT10G131 substitution
GT10G131 Datasheet (PDF)
gt10g131.pdf
GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm Supplied in compact and thin package requires only a small mounting area 5th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) Peak collector current: IC = 200 A (max) Built
Datasheet: GT30G124 , GT30G125 , GT45G127 , GT45G128 , GT30J124 , GT5G133 , GT5J301 , GT8G151 , IRGB20B60PD1 , GT10J303 , GT10J321 , GT15J301 , GT15J321 , GT20J321 , GT30J121 , GT30J122 , GT30J126 .
History: IGB20N60H3
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History: IGB20N60H3
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