GT15J321 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GT15J321
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 30 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
Qgⓘ - Carga total de la puerta, typ: 3000 nC
Paquete / Cubierta: 2-10R1C
Búsqueda de reemplazo de GT15J321 IGBT
GT15J321 Datasheet (PDF)
gt15j321.pdf
GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Unit: mmFast Switching Applications Fourth-generation IGBT Fast switching (FS Enhancement mode type High speed: tf = 0.03 s (typ.) Low saturation Voltage: VCE (sat) = 1.90 V (typ.) FRD included between emitter and collector Absolu
gt15j301.pdf
GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 HIGH POWER SWITCHING APPLICATIONS Unit: mmMOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30s (Max.) (IC = 15A) Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 15A) FRD included between emitter and collector ABSOLUTE MAXIMUM RATI
Otros transistores... GT30J124 , GT5G133 , GT5J301 , GT8G151 , GT10G131 , GT10J303 , GT10J321 , GT15J301 , IXRH40N120 , GT20J321 , GT30J121 , GT30J122 , GT30J126 , GT30J324 , GT35J321 , GT40J121 , GT40J321 .
History: STGWA25H120F2
History: STGWA25H120F2
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: DHG20T65D | G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2
Popular searches
ksa1381 equivalent | 2sa1306 | b817 transistor | 2n3394 | 2sb688 | 2sd551 | ac128 datasheet | 2n5496