GT15J321 Specs and Replacement
Type Designator: GT15J321
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 30 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 15 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
Package: 2-10R1C GT15J321 Substitution - IGBT ⓘ Cross-Reference Search
GT15J321 datasheet
gt15j321.pdf
GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Unit mm Fast Switching Applications Fourth-generation IGBT Fast switching (FS Enhancement mode type High speed tf = 0.03 s (typ.) Low saturation Voltage VCE (sat) = 1.90 V (typ.) FRD included between emitter and collector Absolu... See More ⇒
gt15j301.pdf
GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 HIGH POWER SWITCHING APPLICATIONS Unit mm MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed tf = 0.30 s (Max.) (IC = 15A) Low saturation voltage VCE (sat) = 2.7V (Max.) (IC = 15A) FRD included between emitter and collector ABSOLUTE MAXIMUM RATI... See More ⇒
Specs: GT30J124 , GT5G133 , GT5J301 , GT8G151 , GT10G131 , GT10J303 , GT10J321 , GT15J301 , STGW60V60DF , GT20J321 , GT30J121 , GT30J122 , GT30J126 , GT30J324 , GT35J321 , GT40J121 , GT40J321 .
Keywords - GT15J321 transistor spec
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