All IGBT. GT15J321 Datasheet

 

GT15J321 Datasheet and Replacement


   Type Designator: GT15J321
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 30 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 15 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   Qg ⓘ - Total Gate Charge, typ: 3000 nC
   Package: 2-10R1C
 

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GT15J321 Datasheet (PDF)

 ..1. Size:214K  toshiba
 gt15j321.pdf pdf_icon

GT15J321

GT15J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15J321 High Power Switching Applications Unit: mmFast Switching Applications Fourth-generation IGBT Fast switching (FS Enhancement mode type High speed: tf = 0.03 s (typ.) Low saturation Voltage: VCE (sat) = 1.90 V (typ.) FRD included between emitter and collector Absolu

 8.1. Size:512K  toshiba
 gt15j301.pdf pdf_icon

GT15J321

GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 HIGH POWER SWITCHING APPLICATIONS Unit: mmMOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30s (Max.) (IC = 15A) Low saturation voltage : VCE (sat) = 2.7V (Max.) (IC = 15A) FRD included between emitter and collector ABSOLUTE MAXIMUM RATI

 9.1. Size:307K  toshiba
 gt15j101.pdf pdf_icon

GT15J321

 9.2. Size:295K  toshiba
 gt15j103.pdf pdf_icon

GT15J321

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Datasheet: GT30J124 , GT5G133 , GT5J301 , GT8G151 , GT10G131 , GT10J303 , GT10J321 , GT15J301 , MBQ40T65FDSC , GT20J321 , GT30J121 , GT30J122 , GT30J126 , GT30J324 , GT35J321 , GT40J121 , GT40J321 .

Keywords - GT15J321 transistor datasheet

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