GT40J121 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GT40J121 Datasheet (PDF)

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GT40J121Discrete IGBTs Silicon N-Channel IGBTGT40J121GT40J121GT40J121GT40J1211. Applications1. Applications1. Applications1. Applications Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor Correction (PFC) ApplicationsNote: The product(s) described herein should not be used for any other application.2. Featur

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GT40J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40J322 Current Resonance Inverter Switching Application Unit: mm FRD included between emitter and collector Enhancement mode type High-speed IGBT: tf = 0.20 s (typ.) (IC = 40 A) Low saturation voltage: VCE (sat) = 1.7 V (typ.) (IC = 40 A) Absolute Maximum Ratings (Ta = 25C) Charac

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GT40J325Discrete IGBTs Silicon N-Channel IGBTGT40J325GT40J325GT40J325GT40J3251. Applications1. Applications1. Applications1. Applications Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor Correction (PFC) ApplicationsNote: The product(s) described herein should not be used for any other application.2. Featur

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GT40J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40J321 Current Resonance Inverter Switching Application Unit: mm FRD included between emitter and collector Enhancement mode type High-speed IGBT: tf = 0.11 s (typ.) (IC = 40 A) Low saturation voltage: VCE (sat) = 2.0 V (typ.) (IC = 40 A) Absolute Maximum Ratings (Ta = 25C) Charac

Otros transistores... GT15J301 , GT15J321 , GT20J321 , GT30J121 , GT30J122 , GT30J126 , GT30J324 , GT35J321 , NCE80TD65BT , GT40J321 , GT40J322 , GT40J325 , GT50J121 , GT50J325 , GT50J328 , GT50J341 , GT60J323 .