All IGBT. GT40J121 Datasheet

 

GT40J121 IGBT. Datasheet pdf. Equivalent


   Type Designator: GT40J121
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 80 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   Package: TO3P

 GT40J121 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

GT40J121 Datasheet (PDF)

 ..1. Size:217K  toshiba
 gt40j121.pdf

GT40J121 GT40J121

GT40J121Discrete IGBTs Silicon N-Channel IGBTGT40J121GT40J121GT40J121GT40J1211. Applications1. Applications1. Applications1. Applications Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor Correction (PFC) ApplicationsNote: The product(s) described herein should not be used for any other application.2. Featur

 9.1. Size:332K  toshiba
 gt40j322.pdf

GT40J121 GT40J121

GT40J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40J322 Current Resonance Inverter Switching Application Unit: mm FRD included between emitter and collector Enhancement mode type High-speed IGBT: tf = 0.20 s (typ.) (IC = 40 A) Low saturation voltage: VCE (sat) = 1.7 V (typ.) (IC = 40 A) Absolute Maximum Ratings (Ta = 25C) Charac

 9.2. Size:251K  toshiba
 gt40j325.pdf

GT40J121 GT40J121

GT40J325Discrete IGBTs Silicon N-Channel IGBTGT40J325GT40J325GT40J325GT40J3251. Applications1. Applications1. Applications1. Applications Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor Correction (PFC) ApplicationsNote: The product(s) described herein should not be used for any other application.2. Featur

 9.3. Size:372K  toshiba
 gt40j321.pdf

GT40J121 GT40J121

GT40J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40J321 Current Resonance Inverter Switching Application Unit: mm FRD included between emitter and collector Enhancement mode type High-speed IGBT: tf = 0.11 s (typ.) (IC = 40 A) Low saturation voltage: VCE (sat) = 2.0 V (typ.) (IC = 40 A) Absolute Maximum Ratings (Ta = 25C) Charac

Datasheet: GT15J301 , GT15J321 , GT20J321 , GT30J121 , GT30J122 , GT30J126 , GT30J324 , GT35J321 , BT15T120ANF , GT40J321 , GT40J322 , GT40J325 , GT50J121 , GT50J325 , GT50J328 , GT50J341 , GT60J323 .

 

 
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