GT40J121 - аналоги и описание IGBT

 

GT40J121 - аналоги, основные параметры, даташиты

Наименование: GT40J121

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 80 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 25 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.1 V @25℃

Тип корпуса: TO3P

 Аналог (замена) для GT40J121

- подбор ⓘ IGBT транзистора по параметрам

 

GT40J121 даташит

 ..1. Size:217K  toshiba
gt40j121.pdfpdf_icon

GT40J121

GT40J121 Discrete IGBTs Silicon N-Channel IGBT GT40J121 GT40J121 GT40J121 GT40J121 1. Applications 1. Applications 1. Applications 1. Applications Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor Correction (PFC) Applications Note The product(s) described herein should not be used for any other application. 2. Featur

 9.1. Size:332K  toshiba
gt40j322.pdfpdf_icon

GT40J121

GT40J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40J322 Current Resonance Inverter Switching Application Unit mm FRD included between emitter and collector Enhancement mode type High-speed IGBT tf = 0.20 s (typ.) (IC = 40 A) Low saturation voltage VCE (sat) = 1.7 V (typ.) (IC = 40 A) Absolute Maximum Ratings (Ta = 25 C) Charac

 9.2. Size:251K  toshiba
gt40j325.pdfpdf_icon

GT40J121

GT40J325 Discrete IGBTs Silicon N-Channel IGBT GT40J325 GT40J325 GT40J325 GT40J325 1. Applications 1. Applications 1. Applications 1. Applications Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor Correction (PFC) Applications Note The product(s) described herein should not be used for any other application. 2. Featur

 9.3. Size:372K  toshiba
gt40j321.pdfpdf_icon

GT40J121

GT40J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40J321 Current Resonance Inverter Switching Application Unit mm FRD included between emitter and collector Enhancement mode type High-speed IGBT tf = 0.11 s (typ.) (IC = 40 A) Low saturation voltage VCE (sat) = 2.0 V (typ.) (IC = 40 A) Absolute Maximum Ratings (Ta = 25 C) Charac

Другие IGBT... GT15J301 , GT15J321 , GT20J321 , GT30J121 , GT30J122 , GT30J126 , GT30J324 , GT35J321 , IXRH40N120 , GT40J321 , GT40J322 , GT40J325 , GT50J121 , GT50J325 , GT50J328 , GT50J341 , GT60J323 .

 

 

 

 

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