TSG15N120CN Todos los transistores

 

TSG15N120CN - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TSG15N120CN
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 184 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 30 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 106 nS
   Coesⓘ - Capacitancia de salida, typ: 150 pF
   Paquete / Cubierta: TO3PN
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TSG15N120CN Datasheet (PDF)

 ..1. Size:426K  taiwansemi
 tsg15n120cn.pdf pdf_icon

TSG15N120CN

TSG15N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition: PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 20 15 General Description The TSG15N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

 5.1. Size:444K  taiwansemi
 tsg15n120.pdf pdf_icon

TSG15N120CN

TSG15N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition: PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 20 15 General Description The TSG15N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Otros transistores... GT40J322 , GT40J325 , GT50J121 , GT50J325 , GT50J328 , GT50J341 , GT60J323 , GT60J323H , FGPF4533 , TSG25N120CN , TSG40N120CE , TSG60N100CE , APT15GP90B , APT15GP90BDF1 , APT15GP90K , APT15GT60BR , APT15GT60BRD .

History: IRGP20B120U-E | OST30N65HMF | IXGH32N60BU1 | OST20N135HRF | IRGP4069 | IRGS4056D

 

 
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