TSG15N120CN Datasheet and Replacement
Type Designator: TSG15N120CN
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 184 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 106 nS
Coesⓘ - Output Capacitance, typ: 150 pF
Package: TO3PN
TSG15N120CN substitution
TSG15N120CN Datasheet (PDF)
tsg15n120cn.pdf
TSG15N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition: PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 20 15 General Description The TSG15N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
tsg15n120.pdf
TSG15N120CN N-Channel IGBT with FRD. TO-3PN Pin Definition: PRODUCT SUMMARY 1. Gate 2. Collector VCES (V) VGES (V) IC (A) 3. Emitter 1200 20 15 General Description The TSG15N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
Datasheet: GT40J322 , GT40J325 , GT50J121 , GT50J325 , GT50J328 , GT50J341 , GT60J323 , GT60J323H , IRGP4062D , TSG25N120CN , TSG40N120CE , TSG60N100CE , APT15GP90B , APT15GP90BDF1 , APT15GP90K , APT15GT60BR , APT15GT60BRD .
History: RGT50TS65D
Keywords - TSG15N120CN transistor datasheet
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TSG15N120CN lookup
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History: RGT50TS65D
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