APT40GF120JRD Todos los transistores

 ..1. Size:51K  apt
 apt40gf120jrd.pdf

APT40GF120JRD 1200V 60A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. "UL Recognized" ISOTOP Low Forward Voltage Drop High Freq. Switching to 20KHz C L

 0.1. Size:576K  microsemi
 apt40gf120jrdq2.pdf

APT40GF120JRDQ2 TYPICAL PERFORMANCE CURVES APT40GF120JRDQ2 1200V APT40GF120JRDQ2 FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an Microsemi free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. "UL Recognized" ISOTO

 8.1. Size:170K  apt
 apt40gp90j.pdf

TYPICAL PERFORMANCE CURVES APT40GP90J APT40GP90J 900V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, "UL Recognized" high voltage switching applications and has been optimized for high frequency ISOTOP switchmode power supplies. Low Conduction Loss SSOA Rat

 8.2. Size:197K  apt
 apt40gp60b2df2.pdf

TYPICAL PERFORMANCE CURVES APT40GP60B2DF2 APT40GP60B2DF2 600V POWER MOS 7 IGBT TM T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G switchmode power supplies. C E Low Conduction Loss 100 k

 8.3. Size:440K  apt
 apt40gp90b2dq2g.pdf

TYPICAL PERFORMANCE CURVES APT40GP90B2DQ2(G) 900V APT40GP90B2DQ2 APT40GP90B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high f

 8.4. Size:159K  apt
 apt40gp90bg.pdf

 8.5. Size:162K  apt
 apt40gp90b.pdf

 8.6. Size:96K  apt
 apt40gp60b.pdf

APT40GP60B APT40GP60S 600V POWER MOS 7 IGBT TO-247 D3PAK The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency C G G E switchmode power supplies. C E C Low Conduction Loss 100 kHz operation @ 400V, 4

 8.7. Size:192K  apt
 apt40gp90b2df2.pdf

TYPICAL PERFORMANCE CURVES APT40GP90B2DF2 APT40GP90B2DF2 900V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss SSOA R

 8.8. Size:97K  apt
 apt40gp60j.pdf

APT40GP60J 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" C Low Conduction Loss 100 kHz operation @ 400V, 25A ISOTOP Low Gate

 8.9. Size:455K  apt
 apt40gp90jdq2.pdf

TYPICAL PERFORMANCE CURVES APT40GP90JDQ2 900V APT40GP90JDQ2 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592 Low

 8.10. Size:109K  apt
 apt40gp60bg.pdf

APT40GP60B APT40GP60S 600V POWER MOS 7 IGBT TO-247 D3PAK The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency C G G E switchmode power supplies. C E C Low Conduction Loss 100 kHz operation @ 400V, 4

 8.11. Size:109K  apt
 apt40gp60sg.pdf

APT40GP60B APT40GP60S 600V POWER MOS 7 IGBT TO-247 D3PAK The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency C G G E switchmode power supplies. C E C Low Conduction Loss 100 kHz operation @ 400V, 4

 8.12. Size:206K  apt
 apt40gp90jdf2.pdf

TYPICAL PERFORMANCE CURVES APT40GP90JDF2 APT40GP90JDF2 900V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, "UL Recognized" high voltage switching applications and has been optimized for high frequency ISOTOP switchmode power supplies. Low Conduction Loss SS

 8.13. Size:553K  apt
 apt40gp60jdq2.pdf

TYPICAL PERFORMANCE CURVES APT40GP60JDQ2 600V APT40GP60JDQ2 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recongnized" ISOTOP file # 145592 Low

 8.14. Size:210K  apt
 apt40gp60jdf2.pdf

TYPICAL PERFORMANCE CURVES APT40GP60JDF2 APT40GP60JDF2 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOPfi Low Conduction Loss

 8.15. Size:24K  apt
 apt40gt60br.pdf

APT40GT60BR 600V 80A Thunderbolt IGBT TO-247 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT offers superior ruggedness and ultrafast switching speed. G Low Forward Voltage Drop High Freq. Switching to 150KHz C C E Low Tail Current Ultra Low Leakage Current Avalanche Rated

 8.16. Size:537K  apt
 apt40gp60b2dq2g.pdf

TYPICAL PERFORMANCE CURVES APT40GP60B2DQ2(G) 600V APT40GP60B2DQ2 APT40GP60B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT TM T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high

 8.17. Size:158K  microsemi
 apt40gr120s.pdf

APT40GR120B_S APT40GR120B APT40GR120S 1200V, 40A, VCE(on)= 2.5V Typical . Ultra Fast NPT - IGBT (B) The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. D3PA K Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT offers superior ruggedness and ultrafast switching speed. (S) C G E Features G C Low Saturation Voltage Short Circuit

 8.18. Size:158K  microsemi
 apt40gr120b.pdf

APT40GR120B_S APT40GR120B APT40GR120S 1200V, 40A, VCE(on)= 2.5V Typical . Ultra Fast NPT - IGBT (B) The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. D3PA K Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT offers superior ruggedness and ultrafast switching speed. (S) C G E Features G C Low Saturation Voltage Short Circuit

 8.19. Size:188K  microsemi
 apt40gt60brg.pdf

APT40GT60BR 600V, 80A, VCE(ON) = 2.1V Typical Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged- ness and ultrafast switching speed. Features RBSOA and SCSOA Rated Low Forward Voltage Drop High Frequency Switching to 150KHz Low Tail Current G