APT40GF120JRD Todos los transistores

 

APT40GF120JRD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT40GF120JRD
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 390 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.9 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 130 nS
   Coesⓘ - Capacitancia de salida, typ: 490 pF
   Paquete / Cubierta: SOT227

 Búsqueda de reemplazo de APT40GF120JRD - IGBT

 

APT40GF120JRD Datasheet (PDF)

 ..1. Size:51K  apt
apt40gf120jrd.pdf

APT40GF120JRD
APT40GF120JRD

APT40GF120JRD1200V 60AFast IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed."UL Recognized"ISOTOP Low Forward Voltage Drop High Freq. Switching to 20KHzC L

 0.1. Size:576K  microsemi
apt40gf120jrdq2.pdf

APT40GF120JRD
APT40GF120JRD

APT40GF120JRDQ2TYPICAL PERFORMANCE CURVES APT40GF120JRDQ2 1200V APT40GF120JRDQ2FAST IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an Microsemi free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed."UL Recognized"ISOTO

 8.1. Size:170K  apt
apt40gp90j.pdf

APT40GF120JRD
APT40GF120JRD

TYPICAL PERFORMANCE CURVES APT40GP90JAPT40GP90J900V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPswitchmode power supplies. Low Conduction Loss SSOA Rat

 8.2. Size:197K  apt
apt40gp60b2df2.pdf

APT40GF120JRD
APT40GF120JRD

TYPICAL PERFORMANCE CURVESAPT40GP60B2DF2APT40GP60B2DF2600VPOWER MOS 7 IGBTTMT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGswitchmode power supplies.CE Low Conduction Loss 100 k

 8.3. Size:440K  apt
apt40gp90b2dq2g.pdf

APT40GF120JRD
APT40GF120JRD

TYPICAL PERFORMANCE CURVES APT40GP90B2DQ2(G) 900V APT40GP90B2DQ2 APT40GP90B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high f

 8.4. Size:159K  apt
apt40gp90bg.pdf

APT40GF120JRD
APT40GF120JRD

TYPICAL PERFORMANCE CURVES APT40GP90BAPT40GP90B900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss SSOA RatedC

 8.5. Size:162K  apt
apt40gp90b.pdf

APT40GF120JRD
APT40GF120JRD

TYPICAL PERFORMANCE CURVES APT40GP90BAPT40GP90B900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCE Low Conduction Loss SSOA RatedC

 8.6. Size:96K  apt
apt40gp60b.pdf

APT40GF120JRD
APT40GF120JRD

APT40GP60BAPT40GP60S600VPOWER MOS 7 IGBTTO-247D3PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyCG G Eswitchmode power supplies.CEC Low Conduction Loss 100 kHz operation @ 400V, 4

 8.7. Size:192K  apt
apt40gp90b2df2.pdf

APT40GF120JRD
APT40GF120JRD

TYPICAL PERFORMANCE CURVESAPT40GP90B2DF2APT40GP90B2DF2900V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss SSOA R

 8.8. Size:97K  apt
apt40gp60j.pdf

APT40GF120JRD
APT40GF120JRD

APT40GP60J600VPOWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies."UL Recognized"C Low Conduction Loss 100 kHz operation @ 400V, 25A ISOTOP Low Gate

 8.9. Size:455K  apt
apt40gp90jdq2.pdf

APT40GF120JRD
APT40GF120JRD

TYPICAL PERFORMANCE CURVES APT40GP90JDQ2 900V APT40GP90JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592 Low

 8.10. Size:109K  apt
apt40gp60bg.pdf

APT40GF120JRD
APT40GF120JRD

APT40GP60BAPT40GP60S600VPOWER MOS 7 IGBTTO-247D3PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyCG G Eswitchmode power supplies.CEC Low Conduction Loss 100 kHz operation @ 400V, 4

 8.11. Size:109K  apt
apt40gp60sg.pdf

APT40GF120JRD
APT40GF120JRD

APT40GP60BAPT40GP60S600VPOWER MOS 7 IGBTTO-247D3PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyCG G Eswitchmode power supplies.CEC Low Conduction Loss 100 kHz operation @ 400V, 4

 8.12. Size:206K  apt
apt40gp90jdf2.pdf

APT40GF120JRD
APT40GF120JRD

TYPICAL PERFORMANCE CURVES APT40GP90JDF2APT40GP90JDF2900V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPswitchmode power supplies. Low Conduction Loss SS

 8.13. Size:553K  apt
apt40gp60jdq2.pdf

APT40GF120JRD
APT40GF120JRD

TYPICAL PERFORMANCE CURVES APT40GP60JDQ2 600V APT40GP60JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recongnized"ISOTOP file # 145592 Low

 8.14. Size:210K  apt
apt40gp60jdf2.pdf

APT40GF120JRD
APT40GF120JRD

TYPICAL PERFORMANCE CURVESAPT40GP60JDF2APT40GP60JDF2600VPOWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies."UL Recognized"ISOTOPfi Low Conduction Loss

 8.15. Size:24K  apt
apt40gt60br.pdf

APT40GF120JRD
APT40GF120JRD

APT40GT60BR600V 80AThunderbolt IGBTTO-247The Thunderbolt IGBT is a new generation of high voltage power IGBTs.Using Non-Punch Through Technology the Thunderbolt IGBT offers superiorruggedness and ultrafast switching speed.G Low Forward Voltage Drop High Freq. Switching to 150KHzCCE Low Tail Current Ultra Low Leakage Current Avalanche Rated

 8.16. Size:537K  apt
apt40gp60b2dq2g.pdf

APT40GF120JRD
APT40GF120JRD

TYPICAL PERFORMANCE CURVES APT40GP60B2DQ2(G) 600V APT40GP60B2DQ2 APT40GP60B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTTMT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high

 8.17. Size:158K  microsemi
apt40gr120s.pdf

APT40GF120JRD
APT40GF120JRD

APT40GR120B_S APT40GR120B APT40GR120S 1200V, 40A, VCE(on)= 2.5V Typical .Ultra Fast NPT - IGBT(B)The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. D3PA KUsing Non-Punch-Through Technology, the Ultra Fast NPT-IGBT offers superior ruggedness and ultrafast switching speed.(S)CG EFeaturesGC Low Saturation Voltage Short Circuit

 8.18. Size:158K  microsemi
apt40gr120b.pdf

APT40GF120JRD
APT40GF120JRD

APT40GR120B_S APT40GR120B APT40GR120S 1200V, 40A, VCE(on)= 2.5V Typical .Ultra Fast NPT - IGBT(B)The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. D3PA KUsing Non-Punch-Through Technology, the Ultra Fast NPT-IGBT offers superior ruggedness and ultrafast switching speed.(S)CG EFeaturesGC Low Saturation Voltage Short Circuit

 8.19. Size:188K  microsemi
apt40gt60brg.pdf

APT40GF120JRD
APT40GF120JRD

APT40GT60BR600V, 80A, VCE(ON) = 2.1V TypicalThunderbolt IGBTThe Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged-ness and ultrafast switching speed.Features RBSOA and SCSOA Rated Low Forward Voltage Drop High Frequency Switching to 150KHz Low Tail Current G

Otros transistores... APT33GF120HR , APT35GN120B , APT35GP120B , APT35GP120B2DF2 , APT35GP120J , APT35GP120JDF2 , APT35GT120JU2 , APT35GT120JU3 , IHW40T60 , APT40GP60B , APT40GP60B2DF2 , APT40GP60J , APT40GP60JDF2 , APT40GP90B , APT40GP90B2DF2 , APT40GP90J , APT40GP90JDF2 .

 

 
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