APT40GF120JRD PDF and Equivalents Search

 

APT40GF120JRD Specs and Replacement

Type Designator: APT40GF120JRD

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 390 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.9 V @25℃

tr ⓘ - Rise Time, typ: 130 nS

Coesⓘ - Output Capacitance, typ: 490 pF

Package: SOT227

 APT40GF120JRD Substitution

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APT40GF120JRD datasheet

 ..1. Size:51K  apt
apt40gf120jrd.pdf pdf_icon

APT40GF120JRD

APT40GF120JRD 1200V 60A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. "UL Recognized" ISOTOP Low Forward Voltage Drop High Freq. Switching to 20KHz C L... See More ⇒

 0.1. Size:576K  microsemi
apt40gf120jrdq2.pdf pdf_icon

APT40GF120JRD

APT40GF120JRDQ2 TYPICAL PERFORMANCE CURVES APT40GF120JRDQ2 1200V APT40GF120JRDQ2 FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an Microsemi free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. "UL Recognized" ISOTO... See More ⇒

 8.1. Size:170K  apt
apt40gp90j.pdf pdf_icon

APT40GF120JRD

TYPICAL PERFORMANCE CURVES APT40GP90J APT40GP90J 900V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, "UL Recognized" high voltage switching applications and has been optimized for high frequency ISOTOP switchmode power supplies. Low Conduction Loss SSOA Rat... See More ⇒

 8.2. Size:197K  apt
apt40gp60b2df2.pdf pdf_icon

APT40GF120JRD

TYPICAL PERFORMANCE CURVES APT40GP60B2DF2 APT40GP60B2DF2 600V POWER MOS 7 IGBT TM T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G switchmode power supplies. C E Low Conduction Loss 100 k... See More ⇒

Specs: APT33GF120HR , APT35GN120B , APT35GP120B , APT35GP120B2DF2 , APT35GP120J , APT35GP120JDF2 , APT35GT120JU2 , APT35GT120JU3 , NGD8201N , APT40GP60B , APT40GP60B2DF2 , APT40GP60J , APT40GP60JDF2 , APT40GP90B , APT40GP90B2DF2 , APT40GP90J , APT40GP90JDF2 .

History: APT30GP60BDF1 | APT20GT60CR | APT30GT60BRDQ2G | APT25GN120B | APT35GA90B | APT15GT120SRG

Keywords - APT40GF120JRD transistor spec

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