Справочник IGBT. APT40GF120JRD

 

APT40GF120JRD Даташит. Аналоги. Параметры и характеристики.


   Наименование: APT40GF120JRD
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 390 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 60 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.9 V @25℃
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 130 nS
   Coesⓘ - Выходная емкость, типовая: 490 pF
   Тип корпуса: SOT227
     - подбор IGBT транзистора по параметрам

 

APT40GF120JRD Datasheet (PDF)

 ..1. Size:51K  apt
apt40gf120jrd.pdfpdf_icon

APT40GF120JRD

APT40GF120JRD1200V 60AFast IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed."UL Recognized"ISOTOP Low Forward Voltage Drop High Freq. Switching to 20KHzC L

 0.1. Size:576K  microsemi
apt40gf120jrdq2.pdfpdf_icon

APT40GF120JRD

APT40GF120JRDQ2TYPICAL PERFORMANCE CURVES APT40GF120JRDQ2 1200V APT40GF120JRDQ2FAST IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an Microsemi free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed."UL Recognized"ISOTO

 8.1. Size:170K  apt
apt40gp90j.pdfpdf_icon

APT40GF120JRD

TYPICAL PERFORMANCE CURVES APT40GP90JAPT40GP90J900V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPswitchmode power supplies. Low Conduction Loss SSOA Rat

 8.2. Size:197K  apt
apt40gp60b2df2.pdfpdf_icon

APT40GF120JRD

TYPICAL PERFORMANCE CURVESAPT40GP60B2DF2APT40GP60B2DF2600VPOWER MOS 7 IGBTTMT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGswitchmode power supplies.CE Low Conduction Loss 100 k

Другие IGBT... APT33GF120HR , APT35GN120B , APT35GP120B , APT35GP120B2DF2 , APT35GP120J , APT35GP120JDF2 , APT35GT120JU2 , APT35GT120JU3 , YGW40N65F1 , APT40GP60B , APT40GP60B2DF2 , APT40GP60J , APT40GP60JDF2 , APT40GP90B , APT40GP90B2DF2 , APT40GP90J , APT40GP90JDF2 .

History: IXXH50N60B3D1 | CM600DXL-24S | CM100RL-24NF | CM50YE13-12H | DM2G150SH6NE | JT075N065GHED | MMG200D120B6UC

 

 
Back to Top

 


 
.