APT45GP120J Todos los transistores

 

APT45GP120J - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT45GP120J
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 329 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.3 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 29 nS
   Coesⓘ - Capacitancia de salida, typ: 300 pF
   Paquete / Cubierta: SOT227
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APT45GP120J Datasheet (PDF)

 ..1. Size:97K  apt
 apt45gp120j.pdf pdf_icon

APT45GP120J

APT45GP120J1200VPOWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency "UL Recognized"ISOTOPswitchmode power supplies.C Low Conduction Loss 50 kHz operation @ 800V, 16A Low Gate

 0.1. Size:457K  apt
 apt45gp120jdq220.pdf pdf_icon

APT45GP120J

TYPICAL PERFORMANCE CURVES APT45GP120JDQ2 1200V APT45GP120JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592

 0.2. Size:205K  apt
 apt45gp120jdf2.pdf pdf_icon

APT45GP120J

TYPICAL PERFORMANCE CURVES APT45GP120JDF2APT45GP120JDF21200VPOWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequency "UL Recognized"ISOTOPswitchmode power supplies.C Low Conduction Loss

 0.3. Size:457K  apt
 apt45gp120jdq2.pdf pdf_icon

APT45GP120J

TYPICAL PERFORMANCE CURVES APT45GP120JDQ2 1200V APT45GP120JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592

MOSTRAR MÁS

Otros transistores... APT40GP60JDF2 , APT40GP90B , APT40GP90B2DF2 , APT40GP90J , APT40GP90JDF2 , APT40GT60BR , APT45GP120B , APT45GP120B2DF2 , CRG40T60AK3HD , APT45GP120JDF2 , APT50GF120B2R , APT50GF120JRD , APT50GF60B2RD , APT50GF60BR , APT50GF60HR , APT50GF60JU2 , APT50GF60JU3 .

History: MG06200S-BN4MM | CM100TL-24NF | MMG300Q060B6TC | APTGF50X60BTP3 | IRG4BC30K-S | IXYH40N65B3D1 | HGT1S7N60B3D

 

 
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