APT45GP120J - аналоги и описание IGBT

 

APT45GP120J - аналоги, основные параметры, даташиты

Наименование: APT45GP120J

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 329 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 75 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3.3 V @25℃

tr ⓘ - Время нарастания типовое: 29 nS

Coesⓘ - Выходная емкость, типовая: 300 pF

Тип корпуса: SOT227

 Аналог (замена) для APT45GP120J

- подбор ⓘ IGBT транзистора по параметрам

 

APT45GP120J даташит

 ..1. Size:97K  apt
 apt45gp120j.pdf pdf_icon

APT45GP120J

APT45GP120J 1200V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency "UL Recognized" ISOTOP switchmode power supplies. C Low Conduction Loss 50 kHz operation @ 800V, 16A Low Gate

 0.1. Size:457K  apt
 apt45gp120jdq220.pdf pdf_icon

APT45GP120J

TYPICAL PERFORMANCE CURVES APT45GP120JDQ2 1200V APT45GP120JDQ2 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592

 0.2. Size:205K  apt
 apt45gp120jdf2.pdf pdf_icon

APT45GP120J

TYPICAL PERFORMANCE CURVES APT45GP120JDF2 APT45GP120JDF2 1200V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency "UL Recognized" ISOTOP switchmode power supplies. C Low Conduction Loss

 0.3. Size:457K  apt
 apt45gp120jdq2.pdf pdf_icon

APT45GP120J

TYPICAL PERFORMANCE CURVES APT45GP120JDQ2 1200V APT45GP120JDQ2 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... APT40GP60JDF2 , APT40GP90B , APT40GP90B2DF2 , APT40GP90J , APT40GP90JDF2 , APT40GT60BR , APT45GP120B , APT45GP120B2DF2 , IRG4PC50U , APT45GP120JDF2 , APT50GF120B2R , APT50GF120JRD , APT50GF60B2RD , APT50GF60BR , APT50GF60HR , APT50GF60JU2 , APT50GF60JU3 .

 

 

 

 

↑ Back to Top
.