APT45GP120J Spec and Replacement, IGBT Equivalent Finder, Cross Reference

APT45GP120J Specs and Replacement

Type Designator: APT45GP120J

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 329 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.3 V @25℃

tr ⓘ - Rise Time, typ: 29 nS

Coesⓘ - Output Capacitance, typ: 300 pF

Package: SOT227

APT45GP120J Substitution

- IGBTⓘ Cross-Reference Search

APT45GP120J datasheet

..1. Size:97K apt
apt45gp120j.pdf pdf_icon

APT45GP120J 1200V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency "UL Recognized" ISOTOP switchmode power supplies. C Low Conduction Loss 50 kHz operation @ 800V, 16A Low Gate... See More ⇒

0.1. Size:457K apt
apt45gp120jdq220.pdf pdf_icon

TYPICAL PERFORMANCE CURVES APT45GP120JDQ2 1200V APT45GP120JDQ2 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592 ... See More ⇒

0.2. Size:205K apt
apt45gp120jdf2.pdf pdf_icon

TYPICAL PERFORMANCE CURVES APT45GP120JDF2 APT45GP120JDF2 1200V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency "UL Recognized" ISOTOP switchmode power supplies. C Low Conduction Loss ... See More ⇒

0.3. Size:457K apt
apt45gp120jdq2.pdf pdf_icon