APT80GP60B2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT80GP60B2  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 1041 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃

trⓘ - Tiempo de subida, typ: 40 nS

Coesⓘ - Capacitancia de salida, typ: 735 pF

Encapsulados: TMAX

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APT80GP60B2 datasheet

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APT80GP60B2

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APT80GP60B2

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APT80GP60B2

TYPICAL PERFORMANCE CURVES APT80GP60JDQ3 600V APT80GP60JDQ3 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592 Lo

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 apt80gp60jdf3.pdf pdf_icon

APT80GP60B2

TYPICAL PERFORMANCE CURVES APT80GP60JDF3 APT80GP60JDF3 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" Low Conduction Loss 100 kHz ope

MOSTRAR MÁS

Otros transistores... APT65GP60J, APT65GP60JDF2, APT65GP60L2DF2, APT75GP120B2, APT75GP120J, APT75GP120JDF3, APT75GT120JU2, APT75GT120JU3, IRGB20B60PD1, APT80GP60J, APT80GP60JDF3, APT83GU30B, APT8GT60KR, APTGF100A120T, APTGF100DA120T, APTGF100DU120T, APTGF100SK120T