APT80GP60B2 Spec and Replacement
Type Designator: APT80GP60B2
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 1041 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 40 nS
Coesⓘ - Output Capacitance, typ: 735 pF
Package: TMAX
APT80GP60B2 Transistor Equivalent Substitute - IGBT Cross-Reference Search
APT80GP60B2 specs
apt80gp60jdq3.pdf
TYPICAL PERFORMANCE CURVES APT80GP60JDQ3 600V APT80GP60JDQ3 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592 Lo... See More ⇒
apt80gp60jdf3.pdf
TYPICAL PERFORMANCE CURVES APT80GP60JDF3 APT80GP60JDF3 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" Low Conduction Loss 100 kHz ope... See More ⇒
Specs: APT65GP60J , APT65GP60JDF2 , APT65GP60L2DF2 , APT75GP120B2 , APT75GP120J , APT75GP120JDF3 , APT75GT120JU2 , APT75GT120JU3 , IRG4PC40W , APT80GP60J , APT80GP60JDF3 , APT83GU30B , APT8GT60KR , APTGF100A120T , APTGF100DA120T , APTGF100DU120T , APTGF100SK120T .
Keywords - APT80GP60B2 transistor spec
APT80GP60B2 cross reference
APT80GP60B2 equivalent finder
APT80GP60B2 lookup
APT80GP60B2 substitution
APT80GP60B2 replacement
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
Popular searches
647 transistor | d525 transistor | 2sc1583 | g60t60an3h | mosfet k8a50d | sl100 transistor | d2499 datasheet | 6r190p6 datasheet






