APT80GP60B2 Datasheet. Specs and Replacement

Type Designator: APT80GP60B2  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1041 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Coesⓘ - Output Capacitance, typ: 735 pF

Package: TMAX

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APT80GP60B2 datasheet

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APT80GP60B2

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APT80GP60B2

TYPICAL PERFORMANCE CURVES APT80GP60JDQ3 600V APT80GP60JDQ3 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592 Lo... See More ⇒

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APT80GP60B2

TYPICAL PERFORMANCE CURVES APT80GP60JDF3 APT80GP60JDF3 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" Low Conduction Loss 100 kHz ope... See More ⇒

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Specs: APT65GP60J, APT65GP60JDF2, APT65GP60L2DF2, APT75GP120B2, APT75GP120J, APT75GP120JDF3, APT75GT120JU2, APT75GT120JU3, IRGB20B60PD1, APT80GP60J, APT80GP60JDF3, APT83GU30B, APT8GT60KR, APTGF100A120T, APTGF100DA120T, APTGF100DU120T, APTGF100SK120T

Keywords - APT80GP60B2 transistor spec

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