FGW75N60H Todos los transistores

 

FGW75N60H - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FGW75N60H
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 500 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 130 nS
   Coesⓘ - Capacitancia de salida, typ: 300 pF
   Paquete / Cubierta: TO247
 

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FGW75N60H Datasheet (PDF)

 ..1. Size:498K  fuji
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FGW75N60H

http://www.fujielectric.com/products/semiconductor/FGW75N60H Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 75AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Absol

 0.1. Size:560K  fuji
 fgw75n60hd.pdf pdf_icon

FGW75N60H

http://www.fujielectric.com/products/semiconductor/FGW75N60HD Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 75AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abso

Otros transistores... FGW30N60VD , FGW35N60H , FGW35N60HC , FGW35N60HD , FGW50N60H , FGW50N60HC , FGW50N60HD , FGW50N60VD , FGPF4533 , FGW75N60HD , FGW85N60RB , 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , BRG25N120D , SSIG15N135H .

History: DGC40H120M2 | NGTG50N60FWG | NGTB25N120FLWG | IXGX82N120A3 | IKB10N60T | IRG4PC60UPBF | SGW20N60

 

 
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