FGW75N60H Specs and Replacement
Type Designator: FGW75N60H
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 500 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
tr ⓘ - Rise Time, typ: 130 nS
Coesⓘ - Output Capacitance, typ: 300 pF
Package: TO247
FGW75N60H Substitution - IGBT ⓘ Cross-Reference Search
FGW75N60H datasheet
fgw75n60h.pdf
http //www.fujielectric.com/products/semiconductor/ FGW75N60H Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 75A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Absol... See More ⇒
fgw75n60hd.pdf
http //www.fujielectric.com/products/semiconductor/ FGW75N60HD Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 75A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Abso... See More ⇒
Specs: FGW30N60VD , FGW35N60H , FGW35N60HC , FGW35N60HD , FGW50N60H , FGW50N60HC , FGW50N60HD , FGW50N60VD , IRG7S313U , FGW75N60HD , FGW85N60RB , 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , BRG25N120D , SSIG15N135H .
History: FGW50N60HD
Keywords - FGW75N60H transistor spec
FGW75N60H cross reference
FGW75N60H equivalent finder
FGW75N60H lookup
FGW75N60H substitution
FGW75N60H replacement
History: FGW50N60HD
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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