All IGBT. FGW75N60H Datasheet

 

FGW75N60H Datasheet and Replacement


   Type Designator: FGW75N60H
   Type: IGBT
   Marking Code: 75G60H
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 130 nS
   Coesⓘ - Output Capacitance, typ: 300 pF
   Qg ⓘ - Total Gate Charge, typ: 460 nC
   Package: TO247
 

 FGW75N60H substitution

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FGW75N60H Datasheet (PDF)

 ..1. Size:498K  fuji
 fgw75n60h.pdf pdf_icon

FGW75N60H

http://www.fujielectric.com/products/semiconductor/FGW75N60H Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 75AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Absol

 0.1. Size:560K  fuji
 fgw75n60hd.pdf pdf_icon

FGW75N60H

http://www.fujielectric.com/products/semiconductor/FGW75N60HD Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 75AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abso

Datasheet: FGW30N60VD , FGW35N60H , FGW35N60HC , FGW35N60HD , FGW50N60H , FGW50N60HC , FGW50N60HD , FGW50N60VD , IRGP4062D , FGW75N60HD , FGW85N60RB , 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , BRG25N120D , SSIG15N135H .

History: TIG064E8

Keywords - FGW75N60H transistor datasheet

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 FGW75N60H equivalent finder
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