FGW75N60HD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FGW75N60HD
Código: 75G60HD
Polaridad de transistor: N-Channel
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 500
Tensión colector-emisor (Vce): 600
Voltaje de saturación colector-emisor (Vce sat): 1.5
Tensión emisor-compuerta (Veg): 20
Corriente del colector DC máxima (Ic): 75
Temperatura operativa máxima (Tj), °C: 175
Tiempo de elevación: 130
Capacitancia de salida (Cc), pF: 300
Empaquetado / Estuche: TO247
Búsqueda de reemplazo de FGW75N60HD - IGBT
FGW75N60HD Datasheet (PDF)
..1. fgw75n60hd.pdf Size:560K _fuji
http://www.fujielectric.com/products/semiconductor/FGW75N60HD Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 75AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abso
5.1. fgw75n60h.pdf Size:498K _fuji
http://www.fujielectric.com/products/semiconductor/FGW75N60H Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 75AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Absol
Otros transistores... FGW35N60H , FGW35N60HC , FGW35N60HD , FGW50N60H , FGW50N60HC , FGW50N60HD , FGW50N60VD , FGW75N60H , 2PG001 , FGW85N60RB , 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , BRG25N120D , SSIG15N135H , SSIG20N135H .



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