FGW75N60HD Todos los transistores

 

FGW75N60HD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FGW75N60HD

Código: 75G60HD

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 500

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.5

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 75

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 130

Capacitancia de salida (Cc), pF: 300

Empaquetado / Estuche: TO247

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FGW75N60HD Datasheet (PDF)

..1. fgw75n60hd.pdf Size:560K _fuji

FGW75N60HD
FGW75N60HD

http://www.fujielectric.com/products/semiconductor/FGW75N60HD Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 75AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abso

5.1. fgw75n60h.pdf Size:498K _fuji

FGW75N60HD
FGW75N60HD

http://www.fujielectric.com/products/semiconductor/FGW75N60H Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 75AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Absol

Otros transistores... FGW35N60H , FGW35N60HC , FGW35N60HD , FGW50N60H , FGW50N60HC , FGW50N60HD , FGW50N60VD , FGW75N60H , 2PG001 , FGW85N60RB , 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , BRG25N120D , SSIG15N135H , SSIG20N135H .

 

 
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