FGW75N60HD PDF and Equivalents Search

 

FGW75N60HD Specs and Replacement


   Type Designator: FGW75N60HD
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   tr ⓘ - Rise Time, typ: 130 nS
   Coesⓘ - Output Capacitance, typ: 300 pF
   Package: TO247
 

 FGW75N60HD Substitution

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FGW75N60HD datasheet

 ..1. Size:560K  fuji
fgw75n60hd.pdf pdf_icon

FGW75N60HD

http //www.fujielectric.com/products/semiconductor/ FGW75N60HD Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 75A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Abso... See More ⇒

 5.1. Size:498K  fuji
fgw75n60h.pdf pdf_icon

FGW75N60HD

http //www.fujielectric.com/products/semiconductor/ FGW75N60H Discrete IGBT Discrete IGBT (High-Speed V series) 600V / 75A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply Power coditionner Power factor correction circuit Maximum Ratings and Characteristics Equivalent circuit Absol... See More ⇒

Specs: FGW35N60H , FGW35N60HC , FGW35N60HD , FGW50N60H , FGW50N60HC , FGW50N60HD , FGW50N60VD , FGW75N60H , IRGP4062D , FGW85N60RB , 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , BRG25N120D , SSIG15N135H , SSIG20N135H .

Keywords - FGW75N60HD transistor spec

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