FGW75N60HD Datasheet and Replacement
Type Designator: FGW75N60HD
Type: IGBT + Anti-Parallel Diode
Marking Code: 75G60HD
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 500 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 130 nS
Coesⓘ - Output Capacitance, typ: 300 pF
Qg ⓘ - Total Gate Charge, typ: 460 nC
Package: TO247
FGW75N60HD substitution
FGW75N60HD Datasheet (PDF)
fgw75n60hd.pdf

http://www.fujielectric.com/products/semiconductor/FGW75N60HD Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 75AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Abso
fgw75n60h.pdf

http://www.fujielectric.com/products/semiconductor/FGW75N60H Discrete IGBTDiscrete IGBT (High-Speed V series)600V / 75AFeaturesLow power lossLow switching surge and noiseHigh reliability, high ruggedness (RBSOA, SCSOA etc.)ApplicationsUninterruptible power supplyPower coditionnerPower factor correction circuitMaximum Ratings and Characteristics Equivalent circuit Absol
Datasheet: FGW35N60H , FGW35N60HC , FGW35N60HD , FGW50N60H , FGW50N60HC , FGW50N60HD , FGW50N60VD , FGW75N60H , NCE80TD65BT , FGW85N60RB , 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , BRG25N120D , SSIG15N135H , SSIG20N135H .
Keywords - FGW75N60HD transistor datasheet
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