AP25G45GEM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP25G45GEM  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 2.5 W

|Vce|ⓘ - Tensión máxima colector-emisor: 450 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 6 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150(pulse) A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 6 V @25℃

trⓘ - Tiempo de subida, typ: 24.5 nS

Coesⓘ - Capacitancia de salida, typ: 200 pF

Encapsulados: SO8

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AP25G45GEM datasheet

 ..1. Size:67K  ape
 ap25g45gem.pdf pdf_icon

AP25G45GEM

AP25G45GEM Pb Free Plating Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 450V High Pick Current Capability ICP 150A C C 4.5V Gate Drive C C Strobe Flash Applications C G G E E SO-8 E E Absolute Maximum Ratings Symbol Parameter Rating

 7.1. Size:67K  ape
 ap25g45em.pdf pdf_icon

AP25G45GEM

AP25G45EM Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 450V High Pick Current Capability ICP 150A C C 4.5V Gate Drive C C Strobe Flash Applications C G G E E SO-8 E E Absolute Maximum Ratings Symbol Parameter Rating Units VCE Collector-Emi

 9.1. Size:2013K  cn apm
 ap25g02nf.pdf pdf_icon

AP25G45GEM

AP25G02NF 20V N+P-Channel Enhancement Mode MOSFET Description The AP25G02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =32A DS D R

 9.2. Size:1571K  cn apm
 ap25g03gd.pdf pdf_icon

AP25G45GEM

AP25G03GD 30V N+P-Channel Enhancement Mode MOSFET Description The AP25G03GD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =25A DS D R

MOSTRAR MÁS

Otros transistores... BT25T120ANF, BT15T120ANF, BT15N120ANF, BT40N60BNF, BT30N60ANF, BT50N60ANF, BT15N60A9F, AP25G45EM, RJP30H2A, AP28G45GEM, AP20G45EH, AP20G45EJ, TGPF30N40P, TGPF30N43P, CPV362M4FPBF, CPV362M4UPBF, CPV364M4UPBF