All IGBT. AP25G45GEM Datasheet

 

AP25G45GEM IGBT. Datasheet pdf. Equivalent


   Type Designator: AP25G45GEM
   Type: IGBT + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 2.5 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 450 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
   |Ic|ⓘ - Maximum Collector Current: 150(pulse) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 1.2 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 24.5 nS
   Coesⓘ - Output Capacitance, typ: 200 pF
   Qgⓘ - Total Gate Charge, typ: 64.5 nC
   Package: SO8

 AP25G45GEM Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AP25G45GEM Datasheet (PDF)

 ..1. Size:67K  ape
 ap25g45gem.pdf

AP25G45GEM AP25G45GEM

AP25G45GEMPb Free Plating ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORHigh Input Impedance VCE 450V High Pick Current Capability ICP 150A CC4.5V Gate Drive CCStrobe Flash Applications C GGEESO-8EEAbsolute Maximum RatingsSymbol Parameter Rating

 7.1. Size:67K  ape
 ap25g45em.pdf

AP25G45GEM AP25G45GEM

AP25G45EMAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORHigh Input Impedance VCE 450V High Pick Current Capability ICP 150A CC4.5V Gate Drive CCStrobe Flash Applications C GGEESO-8EEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emi

Datasheet: BT25T120ANF , BT15T120ANF , BT15N120ANF , BT40N60BNF , BT30N60ANF , BT50N60ANF , BT15N60A9F , AP25G45EM , FGH60N60SMD , AP28G45GEM , AP20G45EH , AP20G45EJ , TGPF30N40P , TGPF30N43P , CPV362M4FPBF , CPV362M4UPBF , CPV364M4UPBF .

 

 
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