AP28G45GEM Todos los transistores

 

AP28G45GEM - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP28G45GEM
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 2.5 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 450 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 6 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 130(pulse) A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.8 V @25℃
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 100
   Capacitancia de salida (Cc), typ, pF: 220
   Paquete / Cubierta: SO8

 Búsqueda de reemplazo de AP28G45GEM - IGBT

 

AP28G45GEM Datasheet (PDF)

 ..1. Size:70K  ape
ap28g45gem.pdf

AP28G45GEM
AP28G45GEM

AP28G45GEMPb Free Plating ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORHigh Input Impedance VCE 450V High Pick Current Capability ICP 130A CC 3.3V Gate DriveCCStrobe Flash Applications C GGEESO-8EEAbsolute Maximum RatingsSymbol Parameter Rating

 5.1. Size:93K  ape
ap28g45geo-hf.pdf

AP28G45GEM
AP28G45GEM

AP28G45GEO-HFRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 400V High Peak Current Capability E ICP 150AEEG Low Gate Drive Strobe Flash Applications CCCCTSSOP-8GCEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emitter Voltage 400 VVGEPeak Gate-

 8.1. Size:56K  ape
ap28g40gem-hf.pdf

AP28G45GEM
AP28G45GEM

AP28G40GEM-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 400VCC High Peak Current Capability C ICP 150AC Low Gate DriveG Strobe Flash Applications CEEGE RoHS Compliant & Halogen-Free SO-8EAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emitter V

 8.2. Size:94K  ape
ap28g40geo.pdf

AP28G45GEM
AP28G45GEM

AP28G40GEORoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 400VC High Peak Current Capability ICP 150ACCC Low Gate Drive Strobe Flash Applications CGEETSSOP-8GEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emitter Voltage 400 VVGEPPeak Gate-E

Otros transistores... BT15T120ANF , BT15N120ANF , BT40N60BNF , BT30N60ANF , BT50N60ANF , BT15N60A9F , AP25G45EM , AP25G45GEM , SGT40N60NPFDPN , AP20G45EH , AP20G45EJ , TGPF30N40P , TGPF30N43P , CPV362M4FPBF , CPV362M4UPBF , CPV364M4UPBF , CPV364M4FPBF .

 

 
Back to Top

 


AP28G45GEM
  AP28G45GEM
  AP28G45GEM
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: DAZF150G120XCA | DAZF150G120SCA | DAZF100G170XCA | DAZF100G120XCA | DAZF100G120SCA | DAZF075G120XCA | DAZF075G120SCA | DAHF300G120SB | DAHF225G120SB | DAHF200G120SB | DAHF150G120SB

 

 

 
Back to Top