AP28G45GEM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP28G45GEM  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 2.5 W

|Vce|ⓘ - Tensión máxima colector-emisor: 450 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 6 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 130(pulse) A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.8 V @25℃

trⓘ - Tiempo de subida, typ: 100 nS

Coesⓘ - Capacitancia de salida, typ: 220 pF

Encapsulados: SO8

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AP28G45GEM datasheet

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 ap28g45gem.pdf pdf_icon

AP28G45GEM

AP28G45GEM Pb Free Plating Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 450V High Pick Current Capability ICP 130A C C 3.3V Gate Drive C C Strobe Flash Applications C G G E E SO-8 E E Absolute Maximum Ratings Symbol Parameter Rating

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 ap28g45geo-hf.pdf pdf_icon

AP28G45GEM

AP28G45GEO-HF RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 400V High Peak Current Capability E ICP 150A E E G Low Gate Drive Strobe Flash Applications C C C C TSSOP-8 G C E Absolute Maximum Ratings Symbol Parameter Rating Units VCE Collector-Emitter Voltage 400 V VGE Peak Gate-

 8.1. Size:56K  ape
 ap28g40gem-hf.pdf pdf_icon

AP28G45GEM

AP28G40GEM-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 400V C C High Peak Current Capability C ICP 150A C Low Gate Drive G Strobe Flash Applications C E E G E RoHS Compliant & Halogen-Free SO-8 E Absolute Maximum Ratings Symbol Parameter Rating Units VCE Collector-Emitter V

 8.2. Size:94K  ape
 ap28g40geo.pdf pdf_icon

AP28G45GEM

AP28G40GEO RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 400V C High Peak Current Capability ICP 150A C C C Low Gate Drive Strobe Flash Applications C G E E TSSOP-8 G E E Absolute Maximum Ratings Symbol Parameter Rating Units VCE Collector-Emitter Voltage 400 V VGEP Peak Gate-E

MOSTRAR MÁS

Otros transistores... BT15T120ANF, BT15N120ANF, BT40N60BNF, BT30N60ANF, BT50N60ANF, BT15N60A9F, AP25G45EM, AP25G45GEM, SGT50T65FD1PT, AP20G45EH, AP20G45EJ, TGPF30N40P, TGPF30N43P, CPV362M4FPBF, CPV362M4UPBF, CPV364M4UPBF, CPV364M4FPBF