All IGBT. AP28G45GEM Datasheet

 

AP28G45GEM IGBT. Datasheet pdf. Equivalent


   Type Designator: AP28G45GEM
   Type: IGBT + Built-in Zener Diodes
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 2.5 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 450 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 6 V
   |Ic|ⓘ - Maximum Collector Current: 130(pulse) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 1 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 100 nS
   Coesⓘ - Output Capacitance, typ: 220 pF
   Qgⓘ - Total Gate Charge, typ: 74 nC
   Package: SO8

 AP28G45GEM Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AP28G45GEM Datasheet (PDF)

 ..1. Size:70K  ape
 ap28g45gem.pdf

AP28G45GEM AP28G45GEM

AP28G45GEMPb Free Plating ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTORHigh Input Impedance VCE 450V High Pick Current Capability ICP 130A CC 3.3V Gate DriveCCStrobe Flash Applications C GGEESO-8EEAbsolute Maximum RatingsSymbol Parameter Rating

 5.1. Size:93K  ape
 ap28g45geo-hf.pdf

AP28G45GEM AP28G45GEM

AP28G45GEO-HFRoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 400V High Peak Current Capability E ICP 150AEEG Low Gate Drive Strobe Flash Applications CCCCTSSOP-8GCEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emitter Voltage 400 VVGEPeak Gate-

 8.1. Size:56K  ape
 ap28g40gem-hf.pdf

AP28G45GEM AP28G45GEM

AP28G40GEM-HFHalogen-Free ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 400VCC High Peak Current Capability C ICP 150AC Low Gate DriveG Strobe Flash Applications CEEGE RoHS Compliant & Halogen-Free SO-8EAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emitter V

 8.2. Size:94K  ape
 ap28g40geo.pdf

AP28G45GEM AP28G45GEM

AP28G40GEORoHS-compliant ProductAdvanced Power N-CHANNEL INSULATED GATEElectronics Corp. BIPOLAR TRANSISTOR High Input Impedance VCE 400VC High Peak Current Capability ICP 150ACCC Low Gate Drive Strobe Flash Applications CGEETSSOP-8GEEAbsolute Maximum RatingsSymbol Parameter Rating UnitsVCECollector-Emitter Voltage 400 VVGEPPeak Gate-E

Datasheet: BT15T120ANF , BT15N120ANF , BT40N60BNF , BT30N60ANF , BT50N60ANF , BT15N60A9F , AP25G45EM , AP25G45GEM , RJP30E2DPP-M0 , AP20G45EH , AP20G45EJ , TGPF30N40P , TGPF30N43P , CPV362M4FPBF , CPV362M4UPBF , CPV364M4UPBF , CPV364M4FPBF .

 

 
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