TGPF30N40P Todos los transistores

 

TGPF30N40P - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TGPF30N40P
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 20.8 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 400 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.4 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 105 nS
   Coesⓘ - Capacitancia de salida, typ: 50 pF
   Paquete / Cubierta: TO220F
     - Selección de transistores por parámetros

 

TGPF30N40P Datasheet (PDF)

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TGPF30N40P

TGPF30N40P Features: 400V Trench Technology High Speed Switching Low Conduction Loss C Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification G C E Applications : Plasma Display Panel, Soft switching application, Ordering Part Number Package Packaging type Marking Remark TGPF30N40P TO-220F Tube TGPF30N4

 6.1. Size:922K  trinnotech
 tgpf30n43p.pdf pdf_icon

TGPF30N40P

TGPF30N43P Features: 430V Trench Technology High Speed Switching Low Conduction Loss C Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification G C E Applications : Plasma Display Panel, Soft switching application, Ordering Part Number Package Packaging type Marking Remark TGPF30N43P TO-220F Tube TGPF30N4

Otros transistores... BT30N60ANF , BT50N60ANF , BT15N60A9F , AP25G45EM , AP25G45GEM , AP28G45GEM , AP20G45EH , AP20G45EJ , RJP30H1DPD , TGPF30N43P , CPV362M4FPBF , CPV362M4UPBF , CPV364M4UPBF , CPV364M4FPBF , CPV364M4KPBF , IRGSL4B60K , NGTB15N60S1 .

History: IRG4PH50UD | CRG40T60AK3HD | PDMB100E6 | NGB8207AN | MM120G3T65BM | RJP30E3DPP-M0 | OST80N65HMF

 

 
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