All IGBT. TGPF30N40P Datasheet

 

TGPF30N40P IGBT. Datasheet pdf. Equivalent


   Type Designator: TGPF30N40P
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 20.8
   Maximum Collector-Emitter Voltage |Vce|, V: 400
   Maximum Gate-Emitter Voltage |Vge|, V: 30
   Maximum Collector Current |Ic| @25℃, A: 60
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.4
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 105
   Collector Capacity (Cc), typ, pF: 50
   Package: TO220F

 TGPF30N40P Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

TGPF30N40P Datasheet (PDF)

 ..1. Size:922K  trinnotech
tgpf30n40p.pdf

TGPF30N40P TGPF30N40P

TGPF30N40P Features: 400V Trench Technology High Speed Switching Low Conduction Loss C Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification G C E Applications : Plasma Display Panel, Soft switching application, Ordering Part Number Package Packaging type Marking Remark TGPF30N40P TO-220F Tube TGPF30N4

 6.1. Size:922K  trinnotech
tgpf30n43p.pdf

TGPF30N40P TGPF30N40P

TGPF30N43P Features: 430V Trench Technology High Speed Switching Low Conduction Loss C Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification G C E Applications : Plasma Display Panel, Soft switching application, Ordering Part Number Package Packaging type Marking Remark TGPF30N43P TO-220F Tube TGPF30N4

Datasheet: BT30N60ANF , BT50N60ANF , BT15N60A9F , AP25G45EM , AP25G45GEM , AP28G45GEM , AP20G45EH , AP20G45EJ , RJP30H1DPD , TGPF30N43P , CPV362M4FPBF , CPV362M4UPBF , CPV364M4UPBF , CPV364M4FPBF , CPV364M4KPBF , IRGSL4B60K , NGTB15N60S1 .

 

 
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