TGPF30N40P Datasheet. Specs and Replacement

Type Designator: TGPF30N40P  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 20.8 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 60 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃

tr ⓘ - Rise Time, typ: 105 nS

Coesⓘ - Output Capacitance, typ: 50 pF

Package: TO220F

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TGPF30N40P datasheet

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TGPF30N40P

TGPF30N40P Features 400V Trench Technology High Speed Switching Low Conduction Loss C Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification G C E Applications Plasma Display Panel, Soft switching application, Ordering Part Number Package Packaging type Marking Remark TGPF30N40P TO-220F Tube TGPF30N4... See More ⇒

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TGPF30N40P

TGPF30N43P Features 430V Trench Technology High Speed Switching Low Conduction Loss C Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification G C E Applications Plasma Display Panel, Soft switching application, Ordering Part Number Package Packaging type Marking Remark TGPF30N43P TO-220F Tube TGPF30N4... See More ⇒

Specs: BT30N60ANF, BT50N60ANF, BT15N60A9F, AP25G45EM, AP25G45GEM, AP28G45GEM, AP20G45EH, AP20G45EJ, RJP30H2A, TGPF30N43P, CPV362M4FPBF, CPV362M4UPBF, CPV364M4UPBF, CPV364M4FPBF, CPV364M4KPBF, IRGSL4B60K, NGTB15N60S1

Keywords - TGPF30N40P transistor spec

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