NGD8205A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGD8205A

Tipo de transistor: IGBT

Polaridad de transistor: N-Channel

ESPECIFICACIONES TECNICAS

Máxima potencia disipada (Pc), W: 125

Tensión máxima colector-emisor |Vce|, V: 390

Tensión máxima puerta-emisor |Vge|, V: 15

Colector de Corriente Continua a 25℃ |Ic|, A: 20

Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.6

Temperatura máxima de unión (Tj), ℃: 150

Tiempo de subida (tr), typ, nS: 6000

Capacitancia de salida (Cc), typ, pF: 80

Paquete / Cubierta: TO252

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NGD8205A Datasheet (PDF)

..1. Size:115K onsemi
ngd8205a.pdf

NGD8205N, NGD8205ANIgnition IGBT20 Amp, 350 Volt, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required

8.1. Size:121K 1
ngd8201n ngd8201an.pdf

NGD8201N, NGD8201ANIgnition IGBT20 A, 400 V, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary uses http://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required. 20 A

8.2. Size:81K onsemi
ngd8201b.pdf

NGD8201BIgnition IGBT, 20 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary useswww.onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.20 AMPS, 400 VO

8.3. Size:123K onsemi
ngd8201a.pdf