NGD8205A - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: NGD8205A
Тип транзистора: IGBT
Тип управляющего канала: N-Channel
Максимальная рассеиваемая мощность (Pc), W: 125
Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 390
Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 15
Максимальный постоянный ток коллектора |Ic| @25℃, A: 20
Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.6
Максимальная температура перехода (Tj), ℃: 150
Время нарастания типовое (tr), nS: 6000
Емкость коллектора типовая (Cc), pf: 80
Тип корпуса: TO252
NGD8205A Datasheet (PDF)
ngd8205a.pdf

NGD8205N, NGD8205ANIgnition IGBT20 Amp, 350 Volt, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required
ngd8201n ngd8201an.pdf

NGD8201N, NGD8201ANIgnition IGBT20 A, 400 V, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary uses http://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required. 20 A
ngd8201b.pdf

NGD8201BIgnition IGBT, 20 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary useswww.onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.20 AMPS, 400 VO
ngd8201a.pdf

NGD8201N, NGD8201ANIgnition IGBT20 A, 400 V, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary uses http://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required. 20 A
ngd8201bnt4g.pdf

NGD8201BIgnition IGBT, 20 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary useswww.onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.20 AMPS, 400 VO
Другие IGBT... STGP19NC60K , AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , IKW30N60H3 , IXYA8N90C3D1 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N .



Список транзисторов
Обновления
IGBT: HIA20N140IH-DA | HIA50N65IH-JA | HIA50N65H-SA | HIA50N65T-SA | HIA50N65H-JA | HIA50N65T-JA | HIA30N140CIH-DA | HIA40N120T-SA | HIW30N65T-SA | HIA30N65T-SA | HIA75N65H-SA