All IGBT. NGD8205A Datasheet

 

NGD8205A IGBT. Datasheet pdf. Equivalent

Type Designator: NGD8205A

Type: IGBT

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 125

Maximum Collector-Emitter Voltage |Vce|, V: 390

Maximum Gate-Emitter Voltage |Vge|, V: 15

Maximum Collector Current |Ic| @25℃, A: 20

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.6

Maximum Junction Temperature (Tj), ℃: 150

Rise Time (tr), typ, nS: 6000

Collector Capacity (Cc), typ, pF: 80

Package: TO252

NGD8205A Transistor Equivalent Substitute - IGBT Cross-Reference Search

NGD8205A IGBT. Datasheet pdf. Equivalent

Type Designator: NGD8205A

Type: IGBT

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 125

Maximum Collector-Emitter Voltage |Vce|, V: 390

Maximum Gate-Emitter Voltage |Vge|, V: 15

Maximum Collector Current |Ic| @25℃, A: 20

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.6

Maximum Junction Temperature (Tj), ℃: 150

Rise Time (tr), typ, nS: 6000

Collector Capacity (Cc), typ, pF: 80

Package: TO252

NGD8205A Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NGD8205A Datasheet (PDF)

 ..1. Size:115K  onsemi
ngd8205a.pdf

NGD8205A
NGD8205A

NGD8205N, NGD8205ANIgnition IGBT20 Amp, 350 Volt, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required

 7.1. Size:115K  1
ngd8205n.pdf

NGD8205A
NGD8205A

NGD8205N, NGD8205ANIgnition IGBT20 Amp, 350 Volt, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required

 8.1. Size:121K  1
ngd8201n ngd8201an.pdf

NGD8205A
NGD8205A

NGD8201N, NGD8201ANIgnition IGBT20 A, 400 V, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary uses http://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required. 20 A

 8.2. Size:81K  onsemi
ngd8201b.pdf

NGD8205A
NGD8205A

NGD8201BIgnition IGBT, 20 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary useswww.onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.20 AMPS, 400 VO

 8.3. Size:123K  onsemi
ngd8201a.pdf

NGD8205A
NGD8205A

NGD8201N, NGD8201ANIgnition IGBT20 A, 400 V, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary uses http://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required. 20 A

 8.4. Size:81K  onsemi
ngd8201bnt4g.pdf

NGD8205A
NGD8205A

NGD8201BIgnition IGBT, 20 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary useswww.onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.20 AMPS, 400 VO

Datasheet: STGP19NC60K , AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , IKW30N60H3 , IXYA8N90C3D1 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N .

 

 
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