NGD8205A IGBT. Datasheet pdf. Equivalent

Type Designator: NGD8205A

Type: IGBT

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 125

Maximum Collector-Emitter Voltage |Vce|, V: 390

Maximum Gate-Emitter Voltage |Vge|, V: 15

Maximum Collector Current |Ic| @25℃, A: 20

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.6

Maximum Junction Temperature (Tj), ℃: 150

Rise Time (tr), typ, nS: 6000

Collector Capacity (Cc), typ, pF: 80

Package: TO252

NGD8205A Transistor Equivalent Substitute - IGBT Cross-Reference Search

NGD8205A Datasheet (PDF)

..1. Size:115K onsemi
ngd8205a.pdf

NGD8205N, NGD8205ANIgnition IGBT20 Amp, 350 Volt, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required

8.1. Size:121K 1
ngd8201n ngd8201an.pdf

NGD8201N, NGD8201ANIgnition IGBT20 A, 400 V, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary uses http://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required. 20 A

8.2. Size:81K onsemi
ngd8201b.pdf

NGD8201BIgnition IGBT, 20 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary useswww.onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.20 AMPS, 400 VO

8.3. Size:123K onsemi
ngd8201a.pdf