NGD8205A IGBT. Datasheet pdf. Equivalent

   Type Designator: NGD8205A
   Type: IGBT + Built-in Zener Diodes
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 125
   Maximum Collector-Emitter Voltage |Vce|, V: 390
   Maximum Gate-Emitter Voltage |Vge|, V: 15
   Maximum Collector Current |Ic| @25℃, A: 20
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.15
   Maximum G-E Threshold Voltag |VGE(th)|, V: 2.1
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 6000
   Collector Capacity (Cc), typ, pF: 80
   Package: TO252

NGD8205A Transistor Equivalent Substitute - IGBT Cross-Reference Search

NGD8205A Datasheet (PDF)

..1. Size:115K onsemi
ngd8205a.pdf

NGD8205N, NGD8205ANIgnition IGBT20 Amp, 350 Volt, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required

7.1. Size:115K 1
ngd8205n.pdf

8.1. Size:121K 1
ngd8201n ngd8201an.pdf

NGD8201N, NGD8201ANIgnition IGBT20 A, 400 V, N-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary uses http://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required. 20 A

8.2. Size:81K onsemi
ngd8201bnt4g.pdf

NGD8201BIgnition IGBT, 20 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary useswww.onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.20 AMPS, 400 VO

8.3. Size:123K onsemi
ngd8201a.pdf