AOK20B60D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOK20B60D1
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 139
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 40
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.85
Tensión máxima de puerta-umbral |VGE(th)|, V: 5.7(typ)
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 37
Capacitancia de salida (Cc), typ, pF: 93
Carga total de la puerta (Qg), typ, nC: 24.6
Paquete / Cubierta: TO247
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AOK20B60D1 Datasheet (PDF)
aok20b60d1.pdf
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AOK20B60D1TM600V, 20A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 20Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.85Vof paralleling, minimal gate spike under high dV/dtconditions and resistance
aok20b135d1.pdf
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AOK20B135D1TM 1350V, 20A Alpha IGBT with DiodeGeneral Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE1350V Best in Class VCE(SAT) enables high efficiencies IC (TC=100C) 20A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25C) 1.57V Better thermal management
aok20n60.pdf
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AOK20N60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOK20N60 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
aok20n60l.pdf
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AOK20N60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOK20N60 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
aok20s60.pdf
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AOK20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOK20S60 has been fabricated using the advancedMOSTM high voltage process that is designed to deliver IDM 80Ahigh levels of performance and robustness in switching RDS(ON),max 0.199applications. Qg,typ 20nCBy providing low RDS(on), Qg and EOSS along with Eo
aok20s60l.pdf
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AOK20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOK20S60 has been fabricated using the advancedMOSTM high voltage process that is designed to deliver IDM 80Ahigh levels of performance and robustness in switching RDS(ON),max 0.199applications. Qg,typ 20nCBy providing low RDS(on), Qg and EOSS along with Eo
aok20n60l.pdf
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isc N-Channel MOSFET Transistor AOK20N60LFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.37(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
aok20s60.pdf
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOK20S60FEATURESWith TO-247 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25
aok20s60l.pdf
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isc N-Channel MOSFET Transistor AOK20S60LFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.199(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
Otros transistores... CI15T60 , MMIX4B12N300 , NGD8205A , IXYA8N90C3D1 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , FGPF4633 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , MMIX4B20N300 , AOB10B60D , AOK10B60D , AOT10B60D .
![AOK20B60D1](https://alltransistors.com/images/us.png)
![AOK20B60D1](https://alltransistors.com/images/es.png)
![AOK20B60D1](https://alltransistors.com/images/ru.png)
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