AOK20B60D1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOK20B60D1  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 139 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃

trⓘ - Tiempo de subida, typ: 37 nS

Coesⓘ - Capacitancia de salida, typ: 93 pF

Encapsulados: TO247

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AOK20B60D1 datasheet

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AOK20B60D1

AOK20B60D1 TM 600V, 20A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 20A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.85V of paralleling, minimal gate spike under high dV/dt conditions and resistance

 7.1. Size:1277K  aosemi
aok20b65m1.pdf pdf_icon

AOK20B60D1

AOK20B65M1/AOT20B65M1/AOB20B65M1 TM 650V, 20A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 20A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.7V High efficient turn-on di/dt controllability Low VCE(sat) enab

 7.2. Size:1095K  aosemi
aok20b65m2.pdf pdf_icon

AOK20B60D1

AOK20B65M2 TM 650V, 20A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 20A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies

 8.1. Size:713K  aosemi
aok20b135d1.pdf pdf_icon

AOK20B60D1

AOK20B135D1 TM 1350V, 20A Alpha IGBT with Diode General Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE 1350V Best in Class VCE(SAT) enables high efficiencies IC (TC=100 C) 20A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25 C) 1.57V Better thermal management

Otros transistores... CI15T60, MMIX4B12N300, NGD8205A, IXYA8N90C3D1, IXYP8N90C3D1, APT20GN60BG, APT20GN60KG, APT20GN60SG, IRGP4086, F3L30R06W1E3_B11, WGW15G120N, WGW15G120W, IRG4MC50U, MMIX4B20N300, AOB10B60D, AOK10B60D, AOT10B60D