AOK20B60D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOK20B60D1
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 139 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.7(typ) V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 37 nS
Coesⓘ - Capacitancia de salida, typ: 93 pF
Qgⓘ - Carga total de la puerta, typ: 24.6 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de AOK20B60D1 - IGBT
AOK20B60D1 Datasheet (PDF)
aok20b60d1.pdf
AOK20B60D1TM600V, 20A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 20Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.85Vof paralleling, minimal gate spike under high dV/dtconditions and resistance
aok20b65m1.pdf
AOK20B65M1/AOT20B65M1/AOB20B65M1TM650V, 20A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 20A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.7V High efficient turn-on di/dt controllability Low VCE(sat) enab
aok20b65m2.pdf
AOK20B65M2TM650V, 20A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 20A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies
aok20b135d1.pdf
AOK20B135D1TM 1350V, 20A Alpha IGBT with DiodeGeneral Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE1350V Best in Class VCE(SAT) enables high efficiencies IC (TC=100C) 20A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25C) 1.57V Better thermal management
aok20b120e1.pdf
AOK20B120E1TMAlpha IGBT with Diode1200V, 20AGeneral Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE1200V Best in Class VCE(SAT) enables high efficiencies IC (TC=100C) 20A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25C) 1.68V Better thermal management Hi
aok20b120e2.pdf
AOK20B120E2TM1200V, 20A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary Latest Alpha IGBT ( IGBT) technology VCE1200V Best in Class VCE(sat) enables high efficiencies IC (TC=100C) 20A Low turn-off switching loss due to fast turn-off time VCE(sat) (TC=25C) 1.75V Very smooth turn-off current waveforms reduce EM
aok20b120d1.pdf
AOK20B120D1 TM1200V, 20A Alpha IGBT with DiodeGeneral Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE1200V Best in Class VCE(SAT) enables high efficiencies IC (TC=100C) 20A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25C) 1.54V Better thermal management
aok20b135e1.pdf
AOK20B135E1TMAlpha IGBT with Diode1350V, 20AGeneral Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE1350V Best in Class VCE(SAT) enables high efficiencies IC (TC=100C) 20A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25C) 1.8V Better thermal management Hig
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