Справочник IGBT. AOK20B60D1

 

AOK20B60D1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: AOK20B60D1

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 139

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.85

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20

Максимальный постоянный ток коллектора (Ic): 40

Максимальная температура перехода (Tj): 150

Время нарастания: 37

Емкость коллектора (Cc), pf: 93

Корпус: TO247

Аналог (замена) для AOK20B60D1

 

 

AOK20B60D1 Datasheet (PDF)

1.1. aok20b60d1.pdf Size:720K _aosemi

AOK20B60D1
AOK20B60D1

AOK20B60D1 TM 600V, 20A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100°C) 20A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25°C) 1.85V of paralleling, minimal gate spike under high dV/dt conditions and resistance

4.1. aok20b135d1.pdf Size:713K _aosemi

AOK20B60D1
AOK20B60D1

AOK20B135D1 TM 1350V, 20A Alpha IGBT with Diode General Description Product Summary • Latest AlphaIGBT (α IGBT) technology VCE 1350V • Best in Class VCE(SAT) enables high efficiencies IC (TC=100°C) 20A • Low turn-off switching loss due to fast turn-off time • Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25°C) 1.57V • Better thermal management •

 5.1. aok20n60.pdf Size:445K _aosemi

AOK20B60D1
AOK20B60D1

AOK20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOK20N60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.37Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

5.2. aok20s60l.pdf Size:251K _aosemi

AOK20B60D1
AOK20B60D1

AOK20S60 TM 600V 20A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOK20S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver IDM 80A high levels of performance and robustness in switching RDS(ON),max 0.199Ω applications. Qg,typ 20nC By providing low RDS(on), Qg and EOSS along with Eo

 5.3. aok20n60l.pdf Size:445K _aosemi

AOK20B60D1
AOK20B60D1

AOK20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOK20N60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.37Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

5.4. aok20s60.pdf Size:251K _aosemi

AOK20B60D1
AOK20B60D1

AOK20S60 TM 600V 20A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOK20S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver IDM 80A high levels of performance and robustness in switching RDS(ON),max 0.199Ω applications. Qg,typ 20nC By providing low RDS(on), Qg and EOSS along with Eo

 5.5. aok20s60l.pdf Size:378K _inchange_semiconductor

AOK20B60D1
AOK20B60D1

isc N-Channel MOSFET Transistor AOK20S60L FEATURES ·Drain Current –I = 20A@ T =25℃ D C ·Drain Source Voltage- : V =600V(Min) DSS ·Static Drain-Source On-Resistance : R =0.199Ω(Max) DS(on) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purp

5.6. aok20n60l.pdf Size:377K _inchange_semiconductor

AOK20B60D1
AOK20B60D1

isc N-Channel MOSFET Transistor AOK20N60L FEATURES ·Drain Current –I = 20A@ T =25℃ D C ·Drain Source Voltage- : V =600V(Min) DSS ·Static Drain-Source On-Resistance : R =0.37Ω(Max) DS(on) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpo

5.7. aok20s60.pdf Size:212K _inchange_semiconductor

AOK20B60D1
AOK20B60D1

INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOK20S60 ·FEATURES ·With TO-247 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃

Другие IGBT... CI15T60 , MMIX4B12N300 , NGD8205A , IXYA8N90C3D1 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , IRG4PC40U , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , MMIX4B20N300 , AOB10B60D , AOK10B60D , AOT10B60D .

 

 
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