All IGBT. AOK20B60D1 Datasheet

 

AOK20B60D1 IGBT. Datasheet pdf. Equivalent

Type Designator: AOK20B60D1

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 139

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.85

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 40

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 37

Maximum Collector Capacity (Cc), pF: 93

Package: TO247

AOK20B60D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AOK20B60D1 Datasheet (PDF)

0.1. aok20b60d1.pdf Size:720K _aosemi

AOK20B60D1
AOK20B60D1

AOK20B60D1 TM 600V, 20A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100°C) 20A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25°C) 1.85V of paralleling, minimal gate spike under high dV/dt conditions and resistance

8.1. aok20b135d1.pdf Size:713K _aosemi

AOK20B60D1
AOK20B60D1

AOK20B135D1 TM 1350V, 20A Alpha IGBT with Diode General Description Product Summary • Latest AlphaIGBT (α IGBT) technology VCE 1350V • Best in Class VCE(SAT) enables high efficiencies IC (TC=100°C) 20A • Low turn-off switching loss due to fast turn-off time • Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25°C) 1.57V • Better thermal management •

 9.1. aok20s60.pdf Size:212K _inchange_semiconductor

AOK20B60D1
AOK20B60D1

INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOK20S60 ·FEATURES ·With TO-247 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃

9.2. aok20n60.pdf Size:445K _aosemi

AOK20B60D1
AOK20B60D1

AOK20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOK20N60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.37Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

 9.3. aok20s60l.pdf Size:251K _aosemi

AOK20B60D1
AOK20B60D1

AOK20S60 TM 600V 20A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOK20S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver IDM 80A high levels of performance and robustness in switching RDS(ON),max 0.199Ω applications. Qg,typ 20nC By providing low RDS(on), Qg and EOSS along with Eo

9.4. aok20n60l.pdf Size:445K _aosemi

AOK20B60D1
AOK20B60D1

AOK20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOK20N60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.37Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

 9.5. aok20s60.pdf Size:251K _aosemi

AOK20B60D1
AOK20B60D1

AOK20S60 TM 600V 20A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOK20S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver IDM 80A high levels of performance and robustness in switching RDS(ON),max 0.199Ω applications. Qg,typ 20nC By providing low RDS(on), Qg and EOSS along with Eo

Datasheet: CI15T60 , MMIX4B12N300 , NGD8205A , IXYA8N90C3D1 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , IRG4PC40U , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , MMIX4B20N300 , AOB10B60D , AOK10B60D , AOT10B60D .

 

 
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