AOK20B60D1 IGBT. Datasheet pdf. Equivalent

 ..1. Size:720K  aosemi
 aok20b60d1.pdf

AOK20B60D1TM600V, 20A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 20Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.85Vof paralleling, minimal gate spike under high dV/dtconditions and resistance

 8.1. Size:713K  aosemi
 aok20b135d1.pdf

AOK20B135D1TM 1350V, 20A Alpha IGBT with DiodeGeneral Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE1350V Best in Class VCE(SAT) enables high efficiencies IC (TC=100C) 20A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25C) 1.57V Better thermal management

 9.1. Size:445K  aosemi
 aok20n60.pdf

AOK20N60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOK20N60 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 9.2. Size:251K  aosemi
 aok20s60l.pdf

AOK20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOK20S60 has been fabricated using the advancedMOSTM high voltage process that is designed to deliver IDM 80Ahigh levels of performance and robustness in switching RDS(ON),max 0.199applications. Qg,typ 20nCBy providing low RDS(on), Qg and EOSS along with Eo

 9.3. Size:445K  aosemi
 aok20n60l.pdf

AOK20N60600V,20A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOK20N60 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 9.4. Size:251K  aosemi
 aok20s60.pdf

AOK20S60TM600V 20A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOK20S60 has been fabricated using the advancedMOSTM high voltage process that is designed to deliver IDM 80Ahigh levels of performance and robustness in switching RDS(ON),max 0.199applications. Qg,typ 20nCBy providing low RDS(on), Qg and EOSS along with Eo

 9.5. Size:378K  inchange semiconductor
 aok20s60l.pdf

isc N-Channel MOSFET Transistor AOK20S60LFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.199(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 9.6. Size:377K  inchange semiconductor
 aok20n60l.pdf

isc N-Channel MOSFET Transistor AOK20N60LFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.37(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 9.7. Size:212K  inchange semiconductor
 aok20s60.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOK20S60FEATURESWith TO-247 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25