F3L30R06W1E3_B11 Todos los transistores

 

F3L30R06W1E3_B11 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: F3L30R06W1E3_B11

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.55

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 30

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 12

Empaquetado / Estuche: EASYPACK

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F3L30R06W1E3_B11 Datasheet (PDF)

0.1. f3l30r06w1e3 b11.pdf Size:861K _infineon

F3L30R06W1E3_B11
F3L30R06W1E3_B11

Technische Information / Technical InformationIGBT-ModuleF3L30R06W1E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCV = 600VCESI = 30A / I = 60AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikatione

9.1. f3l300r07pe4.pdf Size:785K _infineon

F3L30R06W1E3_B11
F3L30R06W1E3_B11

Technische Information / Technical InformationIGBT-ModuleF3L300R07PE4IGBT-modulesEconoPACK4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTCEconoPACK4 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTCVorlufige Daten / Preliminary DataV = 650VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications

9.2. f3l300r12me4 b23.pdf Size:907K _infineon

F3L30R06W1E3_B11
F3L30R06W1E3_B11

/ Technical InformationIGBT-F3L300R12ME4_B23IGBT-modulesEconoDUAL3 /IGBT4HE NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTCV = 1200VCESI = 300A / I = 600AC nom CRM Typical Applications

 9.3. f3l300r12pt4 b26.pdf Size:1060K _infineon

F3L30R06W1E3_B11
F3L30R06W1E3_B11

Technische Information / Technical InformationIGBT-ModuleF3L300R12PT4_B26IGBT-modulesEconoPACK4 Modul mit aktiver "Neutral Point Clamp 2" Topologie und PressFIT / NTCEconoPACK4 module with active "Neutral Point Clamp 2" topology and PressFIT / NTCVorlufige Daten / Preliminary Data V = 1200VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications

9.4. f3l300r12me4 b22.pdf Size:906K _infineon

F3L30R06W1E3_B11
F3L30R06W1E3_B11

/ Technical InformationIGBT-F3L300R12ME4_B22IGBT-modulesEconoDUAL3 /IGBT4HE NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTCV = 1200VCESI = 300A / I = 600AC nom CRM Typical Applications

 9.5. f3l300r12mt4 b23.pdf Size:663K _infineon

F3L30R06W1E3_B11
F3L30R06W1E3_B11

Technische Information / Technical InformationIGBT-ModuleF3L300R12MT4_B23IGBT-modulesEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTCV = 1200VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3

9.6. f3l300r12mt4 b22.pdf Size:665K _infineon

F3L30R06W1E3_B11
F3L30R06W1E3_B11

Technische Information / Technical InformationIGBT-ModuleF3L300R12MT4_B22IGBT-modulesEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTCV = 1200VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3

Otros transistores... MMIX4B12N300 , NGD8205A , IXYA8N90C3D1 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , FGH60N60SFD , WGW15G120N , WGW15G120W , IRG4MC50U , MMIX4B20N300 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB .

 

 
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