F3L30R06W1E3_B11 Todos los transistores

 

F3L30R06W1E3_B11 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: F3L30R06W1E3_B11

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.55

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 30

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 12

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: EasyPack

Búsqueda de reemplazo de F3L30R06W1E3_B11 - IGBT

 

F3L30R06W1E3_B11 Datasheet (PDF)

1.1. f3l30r06w1e3 b11.pdf Size:861K _igbt_a

F3L30R06W1E3_B11
F3L30R06W1E3_B11

Technische Information / Technical Information IGBT-Module F3L30R06W1E3_B11 IGBT-modules EasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTC EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC ϑ V = 600V CES I = 30A / I = 60A C nom CRM Typische Anwendungen Typical Applications • 3-Level-Applikatione

5.1. f3l300r07pe4.pdf Size:785K _igbt_a

F3L30R06W1E3_B11
F3L30R06W1E3_B11

Technische Information / Technical Information IGBT-Module F3L300R07PE4 IGBT-modules EconoPACK™4 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC EconoPACK™4 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC Vorläufige Daten / Preliminary Data ϑ V = 650V CES I = 300A / I = 600A C nom CRM Typische Anwendungen Typical Applications

5.2. f3l300r12me4 b23.pdf Size:907K _igbt_a

F3L30R06W1E3_B11
F3L30R06W1E3_B11

技术信息 / Technical Information IGBT-模块 F3L300R12ME4_B23 IGBT-modules EconoDUAL™3 模块 采用第四代沟槽栅/场终止IGBT4和HE型发射极控制二极管 带有温度检测NTC EconoDUAL™3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTC ϑ V = 1200V CES I = 300A / I = 600A C nom CRM 典型应用 Typical Applications • 三电平应用

 5.3. f3l300r12pt4 b26.pdf Size:1060K _igbt_a

F3L30R06W1E3_B11
F3L30R06W1E3_B11

Technische Information / Technical Information IGBT-Module F3L300R12PT4_B26 IGBT-modules EconoPACK™4 Modul mit aktiver "Neutral Point Clamp 2" Topologie und PressFIT / NTC EconoPACK™4 module with active "Neutral Point Clamp 2" topology and PressFIT / NTC Vorläufige Daten / Preliminary Data V = 1200V CES I = 300A / I = 600A C nom CRM Typische Anwendungen Typical Applications

5.4. f3l300r12me4 b22.pdf Size:906K _igbt_a

F3L30R06W1E3_B11
F3L30R06W1E3_B11

技术信息 / Technical Information IGBT-模块 F3L300R12ME4_B22 IGBT-modules EconoDUAL™3 模块 采用第四代沟槽栅/场终止IGBT4和HE型发射极控制二极管 带有温度检测NTC EconoDUAL™3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTC ϑ V = 1200V CES I = 300A / I = 600A C nom CRM 典型应用 Typical Applications • 三电平应用

 5.5. f3l300r12mt4 b23.pdf Size:663K _igbt_a

F3L30R06W1E3_B11
F3L30R06W1E3_B11

Technische Information / Technical Information IGBT-Module F3L300R12MT4_B23 IGBT-modules EconoDUAL™3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTC EconoDUAL™3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTC ϑ V = 1200V CES I = 300A / I = 600A C nom CRM Typische Anwendungen Typical Applications • 3-Level-Applikationen • 3

5.6. f3l300r12mt4 b22.pdf Size:665K _igbt_a

F3L30R06W1E3_B11
F3L30R06W1E3_B11

Technische Information / Technical Information IGBT-Module F3L300R12MT4_B22 IGBT-modules EconoDUAL™3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTC EconoDUAL™3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTC ϑ V = 1200V CES I = 300A / I = 600A C nom CRM Typische Anwendungen Typical Applications • 3-Level-Applikationen • 3

Otros transistores... MMIX4B12N300 , NGD8205A , IXYA8N90C3D1 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , FGH60N60SFD , WGW15G120N , WGW15G120W , IRG4MC50U , MMIX4B20N300 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB .

 

 
Back to Top

 


F3L30R06W1E3_B11
  F3L30R06W1E3_B11
  F3L30R06W1E3_B11
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: 6MBP75VDA120-50 | 6MBP75VDA060-50 | 6MBP75VBA060-50 | 6MBP75RA060 | 6MBP75NA060-01 | 6MBP50VDA120-50 | 6MBP50VDA060-50 | 6MBP50VBA120-50 | 6MBP50VBA060-50 | 6MBP50VAA060-50 |

 

 

 
Back to Top