F3L30R06W1E3_B11 IGBT. Datasheet pdf. Equivalent
Type Designator: F3L30R06W1E3_B11
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 45 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 12 nS
Qgⓘ - Total Gate Charge, typ: 300 nC
Package: MODULE
F3L30R06W1E3_B11 Transistor Equivalent Substitute - IGBT Cross-Reference Search
F3L30R06W1E3_B11 Datasheet (PDF)
f3l30r06w1e3 b11.pdf
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f3l300r12me4 b22.pdf
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