F3L30R06W1E3_B11 IGBT. Datasheet pdf. Equivalent
Type Designator: F3L30R06W1E3_B11
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 150
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 45
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.55
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 12
Total Gate Charge (Qg), typ, nC: 300
Package: MODULE
F3L30R06W1E3_B11 Transistor Equivalent Substitute - IGBT Cross-Reference Search
F3L30R06W1E3_B11 Datasheet (PDF)
f3l30r06w1e3 b11.pdf
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f3l300r12me4 b22.pdf
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f3l300r12mt4-b22.pdf
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Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
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