All IGBT. F3L30R06W1E3_B11 Datasheet

 

F3L30R06W1E3_B11 Datasheet and Replacement


   Type Designator: F3L30R06W1E3_B11
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 45 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 12 nS
   Qg ⓘ - Total Gate Charge, typ: 300 nC
   Package: MODULE
 

 F3L30R06W1E3_B11 substitution

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F3L30R06W1E3_B11 Datasheet (PDF)

 0.1. Size:861K  infineon
 f3l30r06w1e3 b11.pdf pdf_icon

F3L30R06W1E3_B11

Technische Information / Technical InformationIGBT-ModuleF3L30R06W1E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCV = 600VCESI = 30A / I = 60AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikatione

 9.1. Size:626K  infineon
 f3l300r12mt4p-b23.pdf pdf_icon

F3L30R06W1E3_B11

F3L300R12MT4P_B23EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTC / bereitsaufgetragenem Thermal Interface MaterialEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTC /pre-applied Thermal Interface MaterialV = 1200VCESI = 300A / I = 600AC nom CRMPotentielle Anwendungen Potential Applications 3-

 9.2. Size:629K  infineon
 f3l300r12mt4p-b22.pdf pdf_icon

F3L30R06W1E3_B11

F3L300R12MT4P_B22EconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTC / bereitsaufgetragenem Thermal Interface MaterialEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTC /pre-applied Thermal Interface MaterialV = 1200VCESI = 300A / I = 600AC nom CRMPotentielle Anwendungen Potential Applications 3-

 9.3. Size:637K  infineon
 f3l300r12me4-b23.pdf pdf_icon

F3L30R06W1E3_B11

Technische Information / Technical InformationIGBT-ModulF3L300R12ME4_B23IGBT-ModuleEconoDUAL3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled HE Diode und NTCEconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTCV = 1200VCESI = 300A / I = 600AC nom CRMTypische Anwendungen Typical Applications 3-Level-Applikationen 3-L

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Datasheet: MMIX4B12N300 , NGD8205A , IXYA8N90C3D1 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , NGD8201N , WGW15G120N , WGW15G120W , IRG4MC50U , MMIX4B20N300 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB .

Keywords - F3L30R06W1E3_B11 transistor datasheet

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 F3L30R06W1E3_B11 equivalent finder
 F3L30R06W1E3_B11 lookup
 F3L30R06W1E3_B11 substitution
 F3L30R06W1E3_B11 replacement

 

 
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