IRG4MC50U Todos los transistores

 

IRG4MC50U - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG4MC50U

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 2.75

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 35

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 75

Capacitancia de salida (Cc), pF: 250

Empaquetado / Estuche: TO254AA

Búsqueda de reemplazo de IRG4MC50U - IGBT

 

IRG4MC50U Datasheet (PDF)

0.1. irg4mc50u.pdf Size:142K _international_rectifier

IRG4MC50U
IRG4MC50U

PD -94273AIRG4MC50U UltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Electrically Isolated and Hermetically SealedVCES = 600V Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHzVCE(on) max = 2.25VG High operating frequency Switching-loss rating includes all "tail" losses@VGE = 15V, IC = 27AE Ceramic eyelets

6.1. irg4mc50f.pdf Size:140K _international_rectifier

IRG4MC50U
IRG4MC50U

PD -94274AIRG4MC50FFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Electrically Isolated and Hermetically SealedVCES = 600V Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHzVCE(on) max = 2.0VG High operating frequency Switching-loss rating includes all "tail" losses@VGE = 15V, IC = 30AE Ceramic eyeletsn-cha

 8.1. irg4mc40u.pdf Size:204K _international_rectifier

IRG4MC50U
IRG4MC50U

PD-94305FIRG4MC40U UltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeaturesC Electrically Isolated and Hermetically SealedVCES = 600V Simple Drive Requirements Latch-proofVCE(on)max = 2.1V UltraFast Speed Operation 8KHz - 40KHz,G> 200KHz in Resonent Mode High Operating Frequency@VGE =15V, IC = 20AE Switching-loss Rating includes all "tail

8.2. irg4mc30f.pdf Size:195K _international_rectifier

IRG4MC50U
IRG4MC50U

PD-94313DIRG4MC30FFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Electrically Isolated and Hermetically SealedVCES = 600V Simple Drive Requirements Latch-proof Fast Speed Operation 3 kHz - 8 kHzVCE(on) max =1.7VG High Operating Frequency Switching-loss Rating includes all "tail" lossesE @VGE = 15V, IC = 15A Ceramic Eyeletsn-channe

Otros transistores... IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4PH50UD , MMIX4B20N300 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K .

 

 
Back to Top

 


IRG4MC50U
  IRG4MC50U
  IRG4MC50U
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JT015N065FED | FGA25S125P | MMGTU75J120U | MMGT75WD120XB6C | MMGT75W120XB6C | MMGT75W120X6C | MMGT75H120X6C | MMGT50W120XB6C | MMGT50W120X6C | MMGT50H120X6C | MMGT40H120XB6C

 

 

 
Back to Top