IRG4MC50U Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG4MC50U  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 150 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 35 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.25(max) V @25℃

trⓘ - Tiempo de subida, typ: 75(max) nS

Coesⓘ - Capacitancia de salida, typ: 250 pF

Encapsulados: TO254AA

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IRG4MC50U datasheet

 ..1. Size:142K  international rectifier
 irg4mc50u.pdf pdf_icon

IRG4MC50U

PD -94273A IRG4MC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Electrically Isolated and Hermetically Sealed VCES = 600V Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz VCE(on) max = 2.25V G High operating frequency Switching-loss rating includes all "tail" losses @VGE = 15V, IC = 27A E Ceramic eyelets

 6.1. Size:140K  international rectifier
 irg4mc50f.pdf pdf_icon

IRG4MC50U

PD -94274A IRG4MC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Electrically Isolated and Hermetically Sealed VCES = 600V Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz VCE(on) max = 2.0V G High operating frequency Switching-loss rating includes all "tail" losses @VGE = 15V, IC = 30A E Ceramic eyelets n-cha

 8.1. Size:195K  international rectifier
 irg4mc30f.pdf pdf_icon

IRG4MC50U

PD-94313D IRG4MC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Electrically Isolated and Hermetically Sealed VCES = 600V Simple Drive Requirements Latch-proof Fast Speed Operation 3 kHz - 8 kHz VCE(on) max =1.7V G High Operating Frequency Switching-loss Rating includes all "tail" losses E @VGE = 15V, IC = 15A Ceramic Eyelets n-channe

 8.2. Size:204K  international rectifier
 irg4mc40u.pdf pdf_icon

IRG4MC50U

PD-94305F IRG4MC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Electrically Isolated and Hermetically Sealed VCES = 600V Simple Drive Requirements Latch-proof VCE(on)max = 2.1V UltraFast Speed Operation 8KHz - 40KHz, G > 200KHz in Resonent Mode High Operating Frequency @VGE =15V, IC = 20A E Switching-loss Rating includes all "tail

MOSTRAR MÁS

Otros transistores... IXYP8N90C3D1, APT20GN60BG, APT20GN60KG, APT20GN60SG, AOK20B60D1, F3L30R06W1E3_B11, WGW15G120N, WGW15G120W, MBQ50T65FDSC, MMIX4B20N300, AOB10B60D, AOK10B60D, AOT10B60D, NGB8207AB, NGB8207B, AOB15B60D, IRGSL8B60K