IRG4MC50U Todos los transistores

 

IRG4MC50U - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRG4MC50U
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 150 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 35 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.25(max) V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 75(max) nS
   Coesⓘ - Capacitancia de salida, typ: 250 pF
   Paquete / Cubierta: TO254AA
 

 Búsqueda de reemplazo de IRG4MC50U IGBT

   - Selección ⓘ de transistores por parámetros

 

IRG4MC50U Datasheet (PDF)

 ..1. Size:142K  international rectifier
 irg4mc50u.pdf pdf_icon

IRG4MC50U

PD -94273AIRG4MC50U UltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Electrically Isolated and Hermetically SealedVCES = 600V Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHzVCE(on) max = 2.25VG High operating frequency Switching-loss rating includes all "tail" losses@VGE = 15V, IC = 27AE Ceramic eyelets

 6.1. Size:140K  international rectifier
 irg4mc50f.pdf pdf_icon

IRG4MC50U

PD -94274AIRG4MC50FFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Electrically Isolated and Hermetically SealedVCES = 600V Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHzVCE(on) max = 2.0VG High operating frequency Switching-loss rating includes all "tail" losses@VGE = 15V, IC = 30AE Ceramic eyeletsn-cha

 8.1. Size:195K  international rectifier
 irg4mc30f.pdf pdf_icon

IRG4MC50U

PD-94313DIRG4MC30FFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Electrically Isolated and Hermetically SealedVCES = 600V Simple Drive Requirements Latch-proof Fast Speed Operation 3 kHz - 8 kHzVCE(on) max =1.7VG High Operating Frequency Switching-loss Rating includes all "tail" lossesE @VGE = 15V, IC = 15A Ceramic Eyeletsn-channe

 8.2. Size:204K  international rectifier
 irg4mc40u.pdf pdf_icon

IRG4MC50U

PD-94305FIRG4MC40U UltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeaturesC Electrically Isolated and Hermetically SealedVCES = 600V Simple Drive Requirements Latch-proofVCE(on)max = 2.1V UltraFast Speed Operation 8KHz - 40KHz,G> 200KHz in Resonent Mode High Operating Frequency@VGE =15V, IC = 20AE Switching-loss Rating includes all "tail

MOSTRAR MÁS

Otros transistores... IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IKW50N60T , MMIX4B20N300 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K .

History: VS-GA200HS60S1PBF | SKP02N120 | TT100N120PF1E

 

 
Back to Top

 


 
.