Справочник IGBT. IRG4MC50U

 

IRG4MC50U - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IRG4MC50U

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 150

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Напряжение насыщения коллектор-эмиттер (Ucesat): 2.75

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20

Максимальный постоянный ток коллектора (Ic): 35

Максимальная температура перехода (Tj): 150

Время нарастания: 75

Емкость коллектора (Cc), pf: 250

Корпус: TO254AA

Аналог (замена) для IRG4MC50U

 

 

IRG4MC50U Datasheet (PDF)

1.1. irg4mc50u.pdf Size:142K _international_rectifier

IRG4MC50U
IRG4MC50U

PD -94273A IRG4MC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Electrically Isolated and Hermetically Sealed VCES = 600V • Simple Drive Requirements • Latch-proof • Fast Speed operation 3 kHz - 8 kHz VCE(on) max = 2.25V G • High operating frequency • Switching-loss rating includes all "tail" losses @VGE = 15V, IC = 27A E • Ceramic eyelets

2.1. irg4mc50f.pdf Size:140K _international_rectifier

IRG4MC50U
IRG4MC50U

PD -94274A IRG4MC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Electrically Isolated and Hermetically Sealed VCES = 600V • Simple Drive Requirements • Latch-proof • Fast Speed operation 3 kHz - 8 kHz VCE(on) max = 2.0V G • High operating frequency • Switching-loss rating includes all "tail" losses @VGE = 15V, IC = 30A E • Ceramic eyelets n-cha

 4.1. irg4mc40u.pdf Size:204K _international_rectifier

IRG4MC50U
IRG4MC50U

PD-94305F IRG4MC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Electrically Isolated and Hermetically Sealed VCES = 600V • Simple Drive Requirements • Latch-proof VCE(on)max = 2.1V • UltraFast Speed Operation 8KHz - 40KHz, G > 200KHz in Resonent Mode • High Operating Frequency @VGE =15V, IC = 20A E • Switching-loss Rating includes all "tail

4.2. irg4mc30f.pdf Size:195K _international_rectifier

IRG4MC50U
IRG4MC50U

PD-94313D IRG4MC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Electrically Isolated and Hermetically Sealed VCES = 600V • Simple Drive Requirements • Latch-proof • Fast Speed Operation 3 kHz - 8 kHz VCE(on) max =1.7V G • High Operating Frequency • Switching-loss Rating includes all "tail" losses E @VGE = 15V, IC = 15A • Ceramic Eyelets n-channe

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