Справочник IGBT. IRG4MC50U

 

IRG4MC50U - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IRG4MC50U

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 150

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Напряжение насыщения коллектор-эмиттер (Ucesat): 2.75

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20

Максимальный постоянный ток коллектора (Ic): 35

Максимальная температура перехода (Tj): 150

Время нарастания: 75

Емкость коллектора (Cc), pf: 250

Корпус: TO254AA

Аналог (замена) для IRG4MC50U

 

 

IRG4MC50U Datasheet (PDF)

1.1. irg4mc50u.pdf Size:144K _international_rectifier

IRG4MC50U
IRG4MC50U

PD -94273A IRG4MC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Electrically Isolated and Hermetically Sealed VCES = 600V Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz VCE(on) max = 2.25V G High operating frequency Switching-loss rating includes all "tail" losses @VGE = 15V, IC = 27A E Ceramic eyelets n-channel Bene

1.2. irg4mc50u.pdf Size:142K _igbt_a

IRG4MC50U
IRG4MC50U

PD -94273A IRG4MC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Electrically Isolated and Hermetically Sealed VCES = 600V • Simple Drive Requirements • Latch-proof • Fast Speed operation 3 kHz - 8 kHz VCE(on) max = 2.25V G • High operating frequency • Switching-loss rating includes all "tail" losses @VGE = 15V, IC = 27A E • Ceramic eyelets

 2.1. irg4mc50f.pdf Size:142K _international_rectifier

IRG4MC50U
IRG4MC50U

PD -94274A IRG4MC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Electrically Isolated and Hermetically Sealed VCES = 600V Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz VCE(on) max = 2.0V G High operating frequency Switching-loss rating includes all "tail" losses @VGE = 15V, IC = 30A E Ceramic eyelets n-channel Benefits

2.2. irg4mc50f.pdf Size:140K _igbt_a

IRG4MC50U
IRG4MC50U

PD -94274A IRG4MC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Electrically Isolated and Hermetically Sealed VCES = 600V • Simple Drive Requirements • Latch-proof • Fast Speed operation 3 kHz - 8 kHz VCE(on) max = 2.0V G • High operating frequency • Switching-loss rating includes all "tail" losses @VGE = 15V, IC = 30A E • Ceramic eyelets n-cha

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