Справочник IGBT. IRG4MC50U

 

IRG4MC50U - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: IRG4MC50U

Тип транзистора: IGBT

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc), W: 150

Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600

Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20

Максимальный постоянный ток коллектора |Ic| @25℃, A: 35

Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 2.75

Максимальная температура перехода (Tj), ℃: 150

Время нарастания типовое (tr), nS: 75

Емкость коллектора типовая (Cc), pf: 250

Тип корпуса: TO254AA

Аналог (замена) для IRG4MC50U

 

 

IRG4MC50U Datasheet (PDF)

 ..1. Size:142K  international rectifier
 irg4mc50u.pdf

IRG4MC50U IRG4MC50U

PD -94273AIRG4MC50U UltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Electrically Isolated and Hermetically SealedVCES = 600V Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHzVCE(on) max = 2.25VG High operating frequency Switching-loss rating includes all "tail" losses@VGE = 15V, IC = 27AE Ceramic eyelets

 6.1. Size:140K  international rectifier
 irg4mc50f.pdf

IRG4MC50U IRG4MC50U

PD -94274AIRG4MC50FFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Electrically Isolated and Hermetically SealedVCES = 600V Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHzVCE(on) max = 2.0VG High operating frequency Switching-loss rating includes all "tail" losses@VGE = 15V, IC = 30AE Ceramic eyeletsn-cha

 8.1. Size:204K  international rectifier
 irg4mc40u.pdf

IRG4MC50U IRG4MC50U

PD-94305FIRG4MC40U UltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeaturesC Electrically Isolated and Hermetically SealedVCES = 600V Simple Drive Requirements Latch-proofVCE(on)max = 2.1V UltraFast Speed Operation 8KHz - 40KHz,G> 200KHz in Resonent Mode High Operating Frequency@VGE =15V, IC = 20AE Switching-loss Rating includes all "tail

 8.2. Size:195K  international rectifier
 irg4mc30f.pdf

IRG4MC50U IRG4MC50U

PD-94313DIRG4MC30FFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Electrically Isolated and Hermetically SealedVCES = 600V Simple Drive Requirements Latch-proof Fast Speed Operation 3 kHz - 8 kHzVCE(on) max =1.7VG High Operating Frequency Switching-loss Rating includes all "tail" lossesE @VGE = 15V, IC = 15A Ceramic Eyeletsn-channe

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