All IGBT. IRG4MC50U Datasheet

 

IRG4MC50U Datasheet and Replacement


   Type Designator: IRG4MC50U
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 35 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.25(max) V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 75(max) nS
   Coesⓘ - Output Capacitance, typ: 250 pF
   Qg ⓘ - Total Gate Charge, typ: 270(max) nC
   Package: TO254AA
 

 IRG4MC50U substitution

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IRG4MC50U Datasheet (PDF)

 ..1. Size:142K  international rectifier
 irg4mc50u.pdf pdf_icon

IRG4MC50U

PD -94273AIRG4MC50U UltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Electrically Isolated and Hermetically SealedVCES = 600V Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHzVCE(on) max = 2.25VG High operating frequency Switching-loss rating includes all "tail" losses@VGE = 15V, IC = 27AE Ceramic eyelets

 6.1. Size:140K  international rectifier
 irg4mc50f.pdf pdf_icon

IRG4MC50U

PD -94274AIRG4MC50FFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Electrically Isolated and Hermetically SealedVCES = 600V Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHzVCE(on) max = 2.0VG High operating frequency Switching-loss rating includes all "tail" losses@VGE = 15V, IC = 30AE Ceramic eyeletsn-cha

 8.1. Size:195K  international rectifier
 irg4mc30f.pdf pdf_icon

IRG4MC50U

PD-94313DIRG4MC30FFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C Electrically Isolated and Hermetically SealedVCES = 600V Simple Drive Requirements Latch-proof Fast Speed Operation 3 kHz - 8 kHzVCE(on) max =1.7VG High Operating Frequency Switching-loss Rating includes all "tail" lossesE @VGE = 15V, IC = 15A Ceramic Eyeletsn-channe

 8.2. Size:204K  international rectifier
 irg4mc40u.pdf pdf_icon

IRG4MC50U

PD-94305FIRG4MC40U UltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeaturesC Electrically Isolated and Hermetically SealedVCES = 600V Simple Drive Requirements Latch-proofVCE(on)max = 2.1V UltraFast Speed Operation 8KHz - 40KHz,G> 200KHz in Resonent Mode High Operating Frequency@VGE =15V, IC = 20AE Switching-loss Rating includes all "tail

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Keywords - IRG4MC50U transistor datasheet

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