All IGBT. IRG4MC50U Datasheet

 

IRG4MC50U IGBT. Datasheet pdf. Equivalent

Type Designator: IRG4MC50U

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 150

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.75

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 35

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 75

Maximum Collector Capacity (Cc), pF: 250

Package: TO254AA

IRG4MC50U Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG4MC50U Datasheet (PDF)

0.1. irg4mc50u.pdf Size:142K _international_rectifier

IRG4MC50U
IRG4MC50U

PD -94273A IRG4MC50U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Electrically Isolated and Hermetically Sealed VCES = 600V • Simple Drive Requirements • Latch-proof • Fast Speed operation 3 kHz - 8 kHz VCE(on) max = 2.25V G • High operating frequency • Switching-loss rating includes all "tail" losses @VGE = 15V, IC = 27A E • Ceramic eyelets

6.1. irg4mc50f.pdf Size:140K _international_rectifier

IRG4MC50U
IRG4MC50U

PD -94274A IRG4MC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Electrically Isolated and Hermetically Sealed VCES = 600V • Simple Drive Requirements • Latch-proof • Fast Speed operation 3 kHz - 8 kHz VCE(on) max = 2.0V G • High operating frequency • Switching-loss rating includes all "tail" losses @VGE = 15V, IC = 30A E • Ceramic eyelets n-cha

 8.1. irg4mc40u.pdf Size:204K _international_rectifier

IRG4MC50U
IRG4MC50U

PD-94305F IRG4MC40U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Electrically Isolated and Hermetically Sealed VCES = 600V • Simple Drive Requirements • Latch-proof VCE(on)max = 2.1V • UltraFast Speed Operation 8KHz - 40KHz, G > 200KHz in Resonent Mode • High Operating Frequency @VGE =15V, IC = 20A E • Switching-loss Rating includes all "tail

8.2. irg4mc30f.pdf Size:195K _international_rectifier

IRG4MC50U
IRG4MC50U

PD-94313D IRG4MC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Electrically Isolated and Hermetically Sealed VCES = 600V • Simple Drive Requirements • Latch-proof • Fast Speed Operation 3 kHz - 8 kHz VCE(on) max =1.7V G • High Operating Frequency • Switching-loss Rating includes all "tail" losses E @VGE = 15V, IC = 15A • Ceramic Eyelets n-channe

Datasheet: IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4PH50UD , MMIX4B20N300 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K .

 

 
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