AOB10B60D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOB10B60D
Polaridad de transistor: N-Channel
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 163
Tensión colector-emisor (Vce): 600
Voltaje de saturación colector-emisor (Vce sat): 1.53
Tensión emisor-compuerta (Veg): 20
Corriente del colector DC máxima (Ic): 20
Temperatura operativa máxima (Tj), °C: 150
Tiempo de elevación: 15
Capacitancia de salida (Cc), pF: 68
Empaquetado / Estuche: TO263
Búsqueda de reemplazo de AOB10B60D - IGBT
AOB10B60D Datasheet (PDF)
..1. aob10b60d.pdf Size:661K _aosemi
AOB10B60DTM600V, 10A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 10Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.53Vof paralleling, minimal gate spike under high dV/dtconditions and resistance t
9.1. aob10n60l.pdf Size:259K _aosemi
AOT10N60/AOB10N60/AOTF10N60600V,10A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT10N60 & AOB10N60 & AOTF10N60 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)
9.2. aob10t60p.pdf Size:284K _aosemi
AOT10T60P/AOB10T60P/AOTF10T60P600V,10A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 40A Low Ciss and Crss RDS(ON),max
9.3. aob10n60.pdf Size:375K _aosemi
AOT10N60/AOB10N60/AOTF10N60600V,10A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT10N60 & AOB10N60 & AOTF10N60 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)
9.4. aob10n60.pdf Size:253K _inchange_semiconductor
isc N-Channel MOSFET Transistor AOB10N60FEATURESDrain Current I =10A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IRGP4068D , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JT015N065FED | FGA25S125P | MMGTU75J120U | MMGT75WD120XB6C | MMGT75W120XB6C | MMGT75W120X6C | MMGT75H120X6C | MMGT50W120XB6C | MMGT50W120X6C | MMGT50H120X6C | MMGT40H120XB6C