All IGBT. AOB10B60D Datasheet

 

AOB10B60D IGBT. Datasheet pdf. Equivalent

Type Designator: AOB10B60D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 163

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.53

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 20

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 15

Maximum Collector Capacity (Cc), pF: 68

Package: TO263

AOB10B60D Transistor Equivalent Substitute - IGBT Cross-Reference Search

AOB10B60D IGBT. Datasheet pdf. Equivalent

Type Designator: AOB10B60D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 163

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.53

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 20

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 15

Maximum Collector Capacity (Cc), pF: 68

Package: TO263

AOB10B60D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AOB10B60D Datasheet (PDF)

0.1. aob10b60d.pdf Size:661K _aosemi

AOB10B60D
AOB10B60D

AOB10B60D TM 600V, 10A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100°C) 10A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25°C) 1.53V of paralleling, minimal gate spike under high dV/dt conditions and resistance t

9.1. aob10n60l.pdf Size:259K _aosemi

AOB10B60D
AOB10B60D

AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.75Ω performance and robustness in popular AC-DC applications.By providing low RDS(on

9.2. aob10t60p.pdf Size:284K _aosemi

AOB10B60D
AOB10B60D

AOT10T60P/AOB10T60P/AOTF10T60P 600V,10A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology VDS @ Tj,max 700V • Low RDS(ON) IDM 40A • Low Ciss and Crss RDS(ON),max < 0.7Ω • High Current Capability Qg,typ 26nC • RoHS and Halogen Free Compliant Eoss @ 400V 3.5µJ Applications 100% UIS Tested 100% Rg Tested • General Lighting

 9.3. aob10n60.pdf Size:375K _aosemi

AOB10B60D
AOB10B60D

AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.75Ω performance and robustness in popular AC-DC applications.By providing low RDS(on

Datasheet: APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , MMIX4B20N300 , IXGP7N60B , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D , APT20GT60BRDQ1G .

 

 
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