All IGBT. AOB10B60D Datasheet

 

AOB10B60D IGBT. Datasheet pdf. Equivalent

Type Designator: AOB10B60D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 163

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.53

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 20

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 15

Maximum Collector Capacity (Cc), pF: 68

Package: TO263

AOB10B60D Transistor Equivalent Substitute - IGBT Cross-Reference Search

AOB10B60D IGBT. Datasheet pdf. Equivalent

Type Designator: AOB10B60D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 163

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.53

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 20

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 15

Maximum Collector Capacity (Cc), pF: 68

Package: TO263

AOB10B60D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AOB10B60D Datasheet (PDF)

0.1. aob10b60d.pdf Size:661K _aosemi

AOB10B60D
AOB10B60D

AOB10B60DTM600V, 10A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 10Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.53Vof paralleling, minimal gate spike under high dV/dtconditions and resistance t

9.1. aob10n60l.pdf Size:259K _aosemi

AOB10B60D
AOB10B60D

AOT10N60/AOB10N60/AOTF10N60600V,10A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT10N60 & AOB10N60 & AOTF10N60 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

9.2. aob10t60p.pdf Size:284K _aosemi

AOB10B60D
AOB10B60D

AOT10T60P/AOB10T60P/AOTF10T60P600V,10A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 40A Low Ciss and Crss RDS(ON),max

 9.3. aob10n60.pdf Size:375K _aosemi

AOB10B60D
AOB10B60D

AOT10N60/AOB10N60/AOTF10N60600V,10A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT10N60 & AOB10N60 & AOTF10N60 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

9.4. aob10n60.pdf Size:253K _inchange_semiconductor

AOB10B60D
AOB10B60D

isc N-Channel MOSFET Transistor AOB10N60FEATURESDrain Current I =10A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

Datasheet: APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , MMIX4B20N300 , IXGP7N60B , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D , APT20GT60BRDQ1G .

 

 
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