Справочник IGBT. AOB10B60D

 

AOB10B60D - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: AOB10B60D

Тип транзистора: IGBT

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc), W: 163

Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 600

Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20

Максимальный постоянный ток коллектора |Ic| @25℃, A: 20

Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.53

Максимальная температура перехода (Tj), ℃: 150

Время нарастания типовое (tr), nS: 15

Емкость коллектора типовая (Cc), pf: 68

Тип корпуса: TO263

Аналог (замена) для AOB10B60D

 

 

AOB10B60D Datasheet (PDF)

 ..1. Size:661K  aosemi
aob10b60d.pdf

AOB10B60D
AOB10B60D

AOB10B60DTM600V, 10A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 10Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.53Vof paralleling, minimal gate spike under high dV/dtconditions and resistance t

 9.1. Size:259K  aosemi
aob10n60l.pdf

AOB10B60D
AOB10B60D

AOT10N60/AOB10N60/AOTF10N60600V,10A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT10N60 & AOB10N60 & AOTF10N60 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 9.2. Size:284K  aosemi
aob10t60p.pdf

AOB10B60D
AOB10B60D

AOT10T60P/AOB10T60P/AOTF10T60P600V,10A N-Channel MOSFETGeneral Description Product Summary Trench Power AlphaMOS-II technology VDS @ Tj,max 700V Low RDS(ON) IDM 40A Low Ciss and Crss RDS(ON),max

 9.3. Size:375K  aosemi
aob10n60.pdf

AOB10B60D
AOB10B60D

AOT10N60/AOB10N60/AOTF10N60600V,10A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT10N60 & AOB10N60 & AOTF10N60 have beenfabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10Aprocess that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 9.4. Size:253K  inchange semiconductor
aob10n60.pdf

AOB10B60D
AOB10B60D

isc N-Channel MOSFET Transistor AOB10N60FEATURESDrain Current I =10A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

Другие IGBT... APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , MMIX4B20N300 , CRG40T60AN3H , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D , APT20GT60BRDQ1G .

 

 
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