AOB10B60D - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: AOB10B60D
Тип управляющего канала: N-Channel
Максимальная рассеиваемая мощность (Pc): 163
Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600
Напряжение насыщения коллектор-эмиттер (Ucesat): 1.53
Максимально допустимое напряжение эмиттер-затвор (Ueg): 20
Максимальный постоянный ток коллектора (Ic): 20
Максимальная температура перехода (Tj): 150
Время нарастания: 15
Емкость коллектора (Cc), pf: 68
Корпус: TO263
AOB10B60D Datasheet (PDF)
1.1. aob10b60d.pdf Size:661K _aosemi
AOB10B60D TM 600V, 10A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100°C) 10A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25°C) 1.53V of paralleling, minimal gate spike under high dV/dt conditions and resistance t
5.1. aob10n60l.pdf Size:259K _aosemi
AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.75Ω performance and robustness in popular AC-DC applications.By providing low RDS(on
5.2. aob10t60p.pdf Size:284K _aosemi
AOT10T60P/AOB10T60P/AOTF10T60P 600V,10A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology VDS @ Tj,max 700V • Low RDS(ON) IDM 40A • Low Ciss and Crss RDS(ON),max < 0.7Ω • High Current Capability Qg,typ 26nC • RoHS and Halogen Free Compliant Eoss @ 400V 3.5µJ Applications 100% UIS Tested 100% Rg Tested • General Lighting
5.3. aob10n60.pdf Size:375K _aosemi
AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary VDS 700V@150℃ The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 10A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.75Ω performance and robustness in popular AC-DC applications.By providing low RDS(on
Другие IGBT... APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , MMIX4B20N300 , IXGP7N60B , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D , APT20GT60BRDQ1G .



Список транзисторов
Обновления
IGBT: MGD622 | GT50N324 | BT60N60ANF | 2PG011 | MBQ40T65FDSC | IGF40T120F | FGPF30N45TTU | FGH40T65SHDF_F155 | IXBT15N170 | IXBH9N160 |