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AOK10B60D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOK10B60D

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 163

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.53

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 20

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 15

Capacitancia de salida (Cc), pF: 68

Empaquetado / Estuche: TO247

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AOK10B60D Datasheet (PDF)

..1. aok10b60d.pdf Size:719K _aosemi

AOK10B60D AOK10B60D

AOK10B60DTM600V, 10A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 10Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.53Vof paralleling, minimal gate spike under high dV/dtconditions and resistance t

9.1. aok10n90.pdf Size:292K _aosemi

AOK10B60D AOK10B60D

AOK10N90900V,10A N-Channel MOSFETGeneral Description Product Summary VDS1000@150The AOK10N90 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 10Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

9.2. aok10n90.pdf Size:377K _inchange_semiconductor

AOK10B60D AOK10B60D

isc N-Channel MOSFET Transistor AOK10N90FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSStatic Drain-Source On-Resistance: R =0.98(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

Otros transistores... APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , MMIX4B20N300 , AOB10B60D , IRG7SC28U , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D , APT20GT60BRDQ1G , APT20GT60BRG .

 

 
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