AOK10B60D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOK10B60D  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 163 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.53 V @25℃

trⓘ - Tiempo de subida, typ: 15 nS

Coesⓘ - Capacitancia de salida, typ: 68 pF

Encapsulados: TO247

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AOK10B60D datasheet

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AOK10B60D

AOK10B60D TM 600V, 10A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 10A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.53V of paralleling, minimal gate spike under high dV/dt conditions and resistance t

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AOK10B60D

AOK10N90 900V,10A N-Channel MOSFET General Description Product Summary VDS 1000@150 The AOK10N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 10A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

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AOK10B60D

isc N-Channel MOSFET Transistor AOK10N90 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Static Drain-Source On-Resistance R =0.98 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

Otros transistores... APT20GN60SG, AOK20B60D1, F3L30R06W1E3_B11, WGW15G120N, WGW15G120W, IRG4MC50U, MMIX4B20N300, AOB10B60D, FGH60N60SFD, AOT10B60D, NGB8207AB, NGB8207B, AOB15B60D, IRGSL8B60K, AOK15B60D, APT20GT60BRDQ1G, APT20GT60BRG