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AOK10B60D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOK10B60D

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 163

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.53

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 20

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 15

Capacitancia de salida (Cc), pF: 68

Empaquetado / Estuche: TO247

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AOK10B60D Datasheet (PDF)

1.1. aok10b60d.pdf Size:719K _aosemi

AOK10B60D
AOK10B60D

AOK10B60D TM 600V, 10A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100°C) 10A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25°C) 1.53V of paralleling, minimal gate spike under high dV/dt conditions and resistance t

5.1. aok10n90.pdf Size:292K _aosemi

AOK10B60D
AOK10B60D

AOK10N90 900V,10A N-Channel MOSFET General Description Product Summary VDS 1000@150℃ The AOK10N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 10A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.98Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 1MBH50D-060 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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