All IGBT. AOK10B60D Datasheet

 

AOK10B60D Datasheet and Replacement


   Type Designator: AOK10B60D
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 163 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.53 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 68 pF
   Package: TO247
      - IGBT Cross-Reference

 

AOK10B60D Datasheet (PDF)

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AOK10B60D

AOK10B60DTM600V, 10A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 10Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.53Vof paralleling, minimal gate spike under high dV/dtconditions and resistance t

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AOK10B60D

AOK10N90900V,10A N-Channel MOSFETGeneral Description Product Summary VDS1000@150The AOK10N90 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 10Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 9.2. Size:377K  inchange semiconductor
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AOK10B60D

isc N-Channel MOSFET Transistor AOK10N90FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSStatic Drain-Source On-Resistance: R =0.98(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

Datasheet: APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , MMIX4B20N300 , AOB10B60D , IKW50N60H3 , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D , APT20GT60BRDQ1G , APT20GT60BRG .

History: FGH20N60UFD | HGTG40N60B3 | BT50N60ANF | FGH30N60LSD | GT45G128

Keywords - AOK10B60D transistor datasheet

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