All IGBT. AOK10B60D Datasheet

 

AOK10B60D IGBT. Datasheet pdf. Equivalent

Type Designator: AOK10B60D

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 163

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 1.53

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 20

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 15

Maximum Collector Capacity (Cc), pF: 68

Package: TO247

AOK10B60D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AOK10B60D Datasheet (PDF)

0.1. aok10b60d.pdf Size:719K _aosemi

AOK10B60D
AOK10B60D

AOK10B60D TM 600V, 10A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100°C) 10A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25°C) 1.53V of paralleling, minimal gate spike under high dV/dt conditions and resistance t

9.1. aok10n90.pdf Size:292K _aosemi

AOK10B60D
AOK10B60D

AOK10N90 900V,10A N-Channel MOSFET General Description Product Summary VDS 1000@150℃ The AOK10N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 10A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.98Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

Datasheet: APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , MMIX4B20N300 , AOB10B60D , IRG4PF50W , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D , APT20GT60BRDQ1G , APT20GT60BRG .

 

 
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