AOK10B60D Spec and Replacement
Type Designator: AOK10B60D
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 163 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.53 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 15 nS
Coesⓘ - Output Capacitance, typ: 68 pF
Package: TO247
AOK10B60D Substitution
AOK10B60D specs
aok10b60d.pdf
AOK10B60D TM 600V, 10A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 10A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.53V of paralleling, minimal gate spike under high dV/dt conditions and resistance t... See More ⇒
aok10n90.pdf
AOK10N90 900V,10A N-Channel MOSFET General Description Product Summary VDS 1000@150 The AOK10N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 10A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) ... See More ⇒
aok10n90.pdf
isc N-Channel MOSFET Transistor AOK10N90 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Static Drain-Source On-Resistance R =0.98 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒
Specs: APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , MMIX4B20N300 , AOB10B60D , JT075N065WED , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D , APT20GT60BRDQ1G , APT20GT60BRG .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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