AOK10B60D - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.

Наименование: AOK10B60D

Тип управляющего канала: N-Channel

Максимальная рассеиваемая мощность (Pc): 163

Предельно-допустимое напряжение коллектор-эмиттер (Uce): 600

Напряжение насыщения коллектор-эмиттер (Ucesat): 1.53

Максимально допустимое напряжение эмиттер-затвор (Ueg): 20

Максимальный постоянный ток коллектора (Ic): 20

Максимальная температура перехода (Tj): 175

Время нарастания: 15

Емкость коллектора (Cc), pf: 68

Корпус: TO247

Аналог (замена) для AOK10B60D

AOK10B60D Datasheet (PDF)

1.1. aok10b60d.pdf Size:719K _aosemi

AOK10B60D TM 600V, 10A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100°C) 10A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25°C) 1.53V of paralleling, minimal gate spike under high dV/dt conditions and resistance t

5.1. aok10n90.pdf Size:292K _aosemi

AOK10N90 900V,10A N-Channel MOSFET General Description Product Summary VDS 1000@150℃ The AOK10N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 10A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.98Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

5.2. aok10n90.pdf Size:377K _inchange_semiconductor

isc N-Channel MOSFET Transistor AOK10N90 FEATURES ·Drain Current –I = 10A@ T =25℃ D C ·Drain Source Voltage- : V =900V(Min) DSS ·Static Drain-Source On-Resistance : R =0.98Ω(Max) DS(on) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpos

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