NGB8207AB Todos los transistores

 

NGB8207AB - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGB8207AB

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 165

Tensión colector-emisor (Vce): 365

Voltaje de saturación colector-emisor (Vce sat): 1.75

Tensión emisor-compuerta (Veg): 15

Corriente del colector DC máxima (Ic): 20

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 1800

Capacitancia de salida (Cc), pF: 90

Empaquetado / Estuche: TO263

Búsqueda de reemplazo de NGB8207AB - IGBT

 

NGB8207AB Datasheet (PDF)

1.1. ngb8207ab.pdf Size:124K _igbt

NGB8207AB
NGB8207AB

NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

3.1. ngb8207b.pdf Size:130K _igbt

NGB8207AB
NGB8207AB

NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

 4.1. ngb8206a.pdf Size:123K _igbt

NGB8207AB
NGB8207AB

NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

4.2. ngb8202a.pdf Size:123K _igbt

NGB8207AB
NGB8207AB

NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

 4.3. ngb8204a.pdf Size:126K _igbt

NGB8207AB
NGB8207AB

NGB8204N, NGB8204AN Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features http://onsemi.com monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses 18 AMPS, 400 VOLTS include Ignition, Direct Fuel Injection, or wherever high voltage and VCE(on) 3 2

Otros transistores... F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , MMIX4B20N300 , AOB10B60D , AOK10B60D , AOT10B60D , IRG4PF50WD , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D , APT20GT60BRDQ1G , APT20GT60BRG , APT20GT60KRG , RJH1CF5RDPQ-80 .

 

 
Back to Top

 


NGB8207AB
  NGB8207AB
  NGB8207AB
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: FGB40N60SM | GT60M104 | AOB15B65M1 | AOT15B65M1 | STGP7NC60KD | STGF7NC60KD | STGB7NC60KD | FGH75T65UPD | STGW38IH120D | MBQ50T65FDSC |

 

 

 
Back to Top