NGB8207AB Todos los transistores

 

NGB8207AB - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NGB8207AB

Tipo de transistor: IGBT

Polaridad de transistor: N-Channel

ESPECIFICACIONES TECNICAS

Máxima potencia disipada (Pc), W: 165

Tensión máxima colector-emisor |Vce|, V: 365

Tensión máxima puerta-emisor |Vge|, V: 15

Colector de Corriente Continua a 25℃ |Ic|, A: 20

Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.75

Temperatura máxima de unión (Tj), ℃: 175

Tiempo de subida (tr), typ, nS: 1800

Capacitancia de salida (Cc), typ, pF: 90

Paquete / Cubierta: TO263

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NGB8207AB Datasheet (PDF)

 ..1. Size:124K  onsemi
ngb8207ab.pdf

NGB8207AB
NGB8207AB

NGB8207AN, NGB8207ABNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.

 7.1. Size:130K  onsemi
ngb8207b.pdf

NGB8207AB
NGB8207AB

NGB8207N, NGB8207BNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2

 8.1. Size:123K  onsemi
ngb8206a.pdf

NGB8207AB
NGB8207AB

NGB8206N, NGB8206ANIgnition IGBT20 A, 350 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2

 8.2. Size:123K  onsemi
ngb8202a.pdf

NGB8207AB
NGB8207AB

NGB8202N, NGB8202ANIgnition IGBT20 A, 400 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2

 8.3. Size:126K  onsemi
ngb8204a.pdf

NGB8207AB
NGB8207AB

NGB8204N, NGB8204ANIgnition IGBT18 Amps, 400 VoltsN-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featureshttp://onsemi.commonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary uses18 AMPS, 400 VOLTSinclude Ignition, Direct Fuel Injection, or wherever high voltage andVCE(on) 3 2

Otros transistores... F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , MMIX4B20N300 , AOB10B60D , AOK10B60D , AOT10B60D , IKW50N60T , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D , APT20GT60BRDQ1G , APT20GT60BRG , APT20GT60KRG , RJH1CF5RDPQ-80 .

 

 
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