NGB8207AB - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NGB8207AB
Polaridad de transistor: N-Channel
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 165
Tensión colector-emisor (Vce): 365
Voltaje de saturación colector-emisor (Vce sat): 1.75
Tensión emisor-compuerta (Veg): 15
Corriente del colector DC máxima (Ic): 20
Temperatura operativa máxima (Tj), °C: 175
Tiempo de elevación: 1800
Capacitancia de salida (Cc), pF: 90
Paquete / Caja (carcasa): TO263
Búsqueda de reemplazo de NGB8207AB - IGBT
NGB8207AB Datasheet (PDF)
..1. ngb8207ab.pdf Size:124K _onsemi
NGB8207AN, NGB8207ABNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.
7.1. ngb8207b.pdf Size:130K _onsemi
NGB8207N, NGB8207BNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2
8.1. ngb8206a.pdf Size:123K _onsemi
NGB8206N, NGB8206ANIgnition IGBT20 A, 350 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2
8.2. ngb8202a.pdf Size:123K _onsemi
NGB8202N, NGB8202ANIgnition IGBT20 A, 400 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2
8.3. ngb8204a.pdf Size:126K _onsemi
NGB8204N, NGB8204ANIgnition IGBT18 Amps, 400 VoltsN-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featureshttp://onsemi.commonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary uses18 AMPS, 400 VOLTSinclude Ignition, Direct Fuel Injection, or wherever high voltage andVCE(on) 3 2
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , 40N60C3R , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: DGW75N65CTL1 | DGW60N65BTH | DGW50N65CTL1 | DGW50N65CTH | DGW50N65BTH | DGW40N65CTL | DGW40N65CTH | DGW40N65BTH | DGW40N120CTL | DGW40N120CTH0 | DGW40N120CTH