NGB8207AB Todos los transistores

 

NGB8207AB - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NGB8207AB
   Tipo de transistor: IGBT + Built-in Zener Diodes
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 165
   Tensión máxima colector-emisor |Vce|, V: 365
   Tensión máxima puerta-emisor |Vge|, V: 15
   Colector de Corriente Continua a 25℃ |Ic|, A: 20
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.5
   Tensión máxima de puerta-umbral |VGE(th)|, V: 2
   Temperatura máxima de unión (Tj), ℃: 175
   Tiempo de subida (tr), typ, nS: 2320
   Capacitancia de salida (Cc), typ, pF: 90
   Paquete / Cubierta: TO263

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NGB8207AB Datasheet (PDF)

 ..1. Size:124K  onsemi
ngb8207ab.pdf

NGB8207AB
NGB8207AB

NGB8207AN, NGB8207ABNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.

 0.1. Size:124K  1
ngb8207an ngb8207abn.pdf

NGB8207AB
NGB8207AB

NGB8207AN, NGB8207ABNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.

 7.1. Size:130K  1
ngb8207n ngb8207bn.pdf

NGB8207AB
NGB8207AB

NGB8207N, NGB8207BNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2

 7.2. Size:130K  onsemi
ngb8207b.pdf

NGB8207AB
NGB8207AB

NGB8207N, NGB8207BNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , TGPF30N43P , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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