All IGBT. NGB8207AB Datasheet

 

NGB8207AB IGBT. Datasheet pdf. Equivalent

Type Designator: NGB8207AB

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 165

Maximum Collector-Emitter Voltage |Vce|, V: 365

Collector-Emitter saturation Voltage |Vcesat|, V: 1.75

Maximum Gate-Emitter Voltage |Veg|, V: 15

Maximum Collector Current |Ic|, A: 20

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 1800

Maximum Collector Capacity (Cc), pF: 90

Package: TO263

NGB8207AB Transistor Equivalent Substitute - IGBT Cross-Reference Search

NGB8207AB IGBT. Datasheet pdf. Equivalent

Type Designator: NGB8207AB

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 165

Maximum Collector-Emitter Voltage |Vce|, V: 365

Collector-Emitter saturation Voltage |Vcesat|, V: 1.75

Maximum Gate-Emitter Voltage |Veg|, V: 15

Maximum Collector Current |Ic|, A: 20

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 1800

Maximum Collector Capacity (Cc), pF: 90

Package: TO263

NGB8207AB Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

NGB8207AB Datasheet (PDF)

1.1. ngb8207ab.pdf Size:124K _igbt

NGB8207AB
NGB8207AB

NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.

3.1. ngb8207b.pdf Size:130K _igbt

NGB8207AB
NGB8207AB

NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

 4.1. ngb8206a.pdf Size:123K _igbt

NGB8207AB
NGB8207AB

NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

4.2. ngb8202a.pdf Size:123K _igbt

NGB8207AB
NGB8207AB

NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http://onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2

 4.3. ngb8204a.pdf Size:126K _igbt

NGB8207AB
NGB8207AB

NGB8204N, NGB8204AN Ignition IGBT 18 Amps, 400 Volts N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features http://onsemi.com monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses 18 AMPS, 400 VOLTS include Ignition, Direct Fuel Injection, or wherever high voltage and VCE(on) 3 2

Datasheet: F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , MMIX4B20N300 , AOB10B60D , AOK10B60D , AOT10B60D , IRG4PF50WD , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D , APT20GT60BRDQ1G , APT20GT60BRG , APT20GT60KRG , RJH1CF5RDPQ-80 .

 

 
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